PESD12VS1UL,315 NXP Semiconductors, PESD12VS1UL,315 Datasheet - Page 6

• Manufacturer Part Number: PESD12VS1UL,315
• Description: DIODE ESD PROTECTION SOD`-882
• Manufacturer: NXP Semiconductors

Specifications of PESD12VS1UL,315

• Package / Case: SOD-882
• Voltage - Reverse Standoff (typ): 12V
• Voltage - Breakdown: 14.7V
• Power (watts): 150W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Channels: 1 Channel
• Clamping Voltage: 35 V
• Operating Voltage: 12 V
• Breakdown Voltage: 15 V
• Peak Surge Current: 5 A
• Peak Pulse Power Dissipation: 150 W
• Capacitance: 38 pF
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 0.62(Max) mm W x 1.02(Max) mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4797-2; 934059977315; PESD12VS1UL T/R; PESD12VS1UL T/R; PESD12VS1UL,315

NXP Semiconductors
PESDXS1UL_SER_2
Product data sheet
Fig 3.
Fig 5.
P
(pF)
(W)
C
(1) PESD3V3S1UL; V
(2) PESD5V0S1UL; V
PP
240
200
160
120
10
10
10
d
10
80
40
4
3
2
1
0
T
Peak pulse power as a function of exponential
pulse duration; typical values
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
amb
= 25 C
1
(1)
(2)
amb
10
= 25 C
2
RWM
RWM
= 3.3 V
= 5.0 V
3
10
2
t
p
4
001aaa726
001aaa727
( s)
V
R
(V)
10
Rev. 02 — 20 August 2009
5
3
Fig 4.
Fig 6.
P
PP(25 C)
P
(pF)
C
PP
(1) PESD12VS1UL; V
(2) PESD15VS1UL; V
(3) PESD24VS1UL; V
d
1.2
0.8
0.4
50
40
30
20
10
0
ESD protection diodes in a SOD882 package
0
0
Relative variation of peak pulse power as a
function of junction temperature; typical
values
0
f = 1 MHz; T
Diode capacitance as a function of reverse
voltage; typical values
PESDxS1UL series
5
50
amb
(1)
= 25 C
10
RWM
RWM
RWM
100
= 12 V
= 15 V
= 24 V
(2)
15
150
(3)
© NXP B.V. 2009. All rights reserved.
20
001aaa193
T
001aaa728
V
j
( C)
R
(V)
200
25
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