PESD12VU1UT,215 NXP Semiconductors, PESD12VU1UT,215 Datasheet - Page 10

• Manufacturer Part Number: PESD12VU1UT,215
• Description: DIODE ESD PROTECTION SOT23
• Manufacturer: NXP Semiconductors

Specifications of PESD12VU1UT,215

• Voltage - Reverse Standoff (typ): 12V
• Voltage - Breakdown: 14.2V
• Power (watts): 200W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Polarity: Unidirectional
• Clamping Voltage: 23 V
• Operating Voltage: 12 V
• Breakdown Voltage: 15 V
• Termination Style: SMD/SMT
• Peak Surge Current: 5 A
• Peak Pulse Power Dissipation: 200 W
• Capacitance: 0.6 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 2.5 mm W x 3 mm L x 1.1 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-4026-2; 934059104215; PESD12VU1UT T/R; PESD12VU1UT T/R

NXP Semiconductors
9. Package outline
10. Packing information
PESDXU1UT_SER_2
Product data sheet
Table 9.
The -xxx numbers are the last three digits of the 12NC ordering code.
[1]
Type number
PESD3V3U1UT
PESD5V0U1UT
PESD12VU1UT
PESD15VU1UT
PESD24VU1UT
Fig 8.
For further information and the availability of packing methods, see
Package outline SOT23 (TO-236AB)
Packing methods
Package
SOT23
2.5
2.1
Dimensions in mm
Rev. 02 — 20 August 2009
Ultra low capacitance ESD protection diode in SOT23 package
1.4
1.2
1
Description
4 mm pitch, 8 mm tape and reel
3.0
2.8
1.9
3
PESDxU1UT series
2
0.48
0.38
0.45
0.15
Section
1.1
0.9
[1]
0.15
0.09
04-11-04
13.
Packing quantity
3000
-215
© NXP B.V. 2009. All rights reserved.
10000
-235
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