PESD5V0V4UF,115 NXP Semiconductors, PESD5V0V4UF,115 Datasheet - Page 5

• Manufacturer Part Number: PESD5V0V4UF,115
• Description: DIODE ESD PROTECT VLOW 6-XSON
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD5V0V4UF,115

• Package / Case: 6-XSON (Micropak™), SOT-886
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6.4V
• Power (watts): 16W
• Polarization: 4 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Channels: 4 Channels
• Clamping Voltage: 13 V
• Operating Voltage: 5 V
• Breakdown Voltage: 6.8 V
• Peak Surge Current: 1.5 A
• Peak Pulse Power Dissipation: 16 W
• Capacitance: 12 pF
• Maximum Operating Temperature: + 105 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.05(Max) mm W x 1.5(Max) mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4804-2; 934061202115; PESD5V0V4UF T/R; PESD5V0V4UF T/R; PESD5V0V4UF,115

NXP Semiconductors
6. Characteristics
PESDXV4UF_G_W_3
Product data sheet
Table 9.
T
Symbol Parameter
Per diode
V
I
V
C
RM
amb
RWM
BR
d
= 25 C unless otherwise specified.
reverse standoff voltage
reverse leakage current
breakdown voltage
diode capacitance
Characteristics
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD3V3V4UF
PESD3V3V4UG
PESD3V3V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
PESD5V0V4UF
PESD5V0V4UG
PESD5V0V4UW
Rev. 03 — 28 January 2008
Very low capacitance quadruple ESD protection diode arrays
Conditions
V
V
I
f = 1 MHz
R
RWM
RWM
V
V
V
V
= 1 mA
R
R
R
R
= 0 V
= 3.3 V
= 0 V
= 5 V
= 3.3 V
= 5.0 V
PESDxV4UF/G/W
Min
-
-
-
-
5.3
6.4
-
-
-
-
Typ
-
-
40
3
5.6
6.8
15
9
12
6
© NXP B.V. 2008. All rights reserved.
Max
3.3
5.0
300
25
5.9
7.2
18
12
15
9
Unit
V
V
nA
nA
V
V
pF
pF
pF
pF
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