PESD5V0X1BL,315 NXP Semiconductors, PESD5V0X1BL,315 Datasheet - Page 3

• Manufacturer Part Number: PESD5V0X1BL,315
• Description: DIODE ESD PROT BI-DIR 5V SOD-882
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0X1BL,315

• Package / Case: SOD-882
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 7.5V
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Channels: 1 Channel
• Operating Voltage: 5 V
• Breakdown Voltage: 7.5 V
• Termination Style: SMD/SMT
• Capacitance: 0.9 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 1.35 mm W x 2.7 mm L x 1.1 mm H
• Number Of Elements: 1
• Package Type: SOD-882
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 6V
• Reverse Stand-off Voltage: 5V
• Leakage Current (max): 100nA
• Test Current (it): 5mA
• Operating Temp Range: -55C to 150C
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-4674-2; 934061649315; PESD5V0X1BL T/R

NXP Semiconductors
PESD5V0X1BA_PESD5V0X1BL_1
Product data sheet
Table 7.
T
[1]
Table 8.
Symbol
Per diode
V
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
amb
Fig 1.
ESD
Device stressed with ten non-repetitive ESD pulses.
= 25 C unless otherwise specified.
ESD pulse waveform according to IEC 61000-4-2
Parameter
electrostatic discharge voltage
ESD maximum ratings
ESD standards compliance
Rev. 01 — 4 November 2008
PESD5V0X1BA; PESD5V0X1BL
100 %
10 %
90 %
I
PP
Ultra low capacitance bidirectional ESD protection diodes
t
r
30 ns
0.7 ns to 1 ns
Conditions
IEC 61000-4-2
(contact discharge)
MIL-STD-883 (human
body model)
60 ns
Conditions
> 8 kV (contact)
> 4 kV
001aaa631
t
[1]
Min
-
-
© NXP B.V. 2008. All rights reserved.
Max
9
10
Unit
kV
kV
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