PESD15VL2BT,215 NXP Semiconductors, PESD15VL2BT,215 Datasheet - Page 4

• Manufacturer Part Number: PESD15VL2BT,215
• Description: DIODE DUAL BIESD PROT SOT23
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD15VL2BT,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 15V
• Voltage - Breakdown: 17.1V
• Power (watts): 200W
• Polarization: 2 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 25 V
• Operating Voltage: 15 V
• Breakdown Voltage: 18.8 V
• Termination Style: SMD/SMT
• Peak Surge Current: 5 A
• Peak Pulse Power Dissipation: 200 W
• Capacitance: 16 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 2.5 mm W x 3 mm L x 1.1 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4028-2; 934058866215; PESD15VL2BT T/R; PESD15VL2BT T/R

NXP Semiconductors
PESDXL2BT_SER_2
Product data sheet
Fig 1.
(%)
I
PP
120
80
40
0
0
8/20 s pulse waveform according to
IEC 61000-4-5
10
100 % I
e
PP
t
; 8 s
20
50 % I
PP
30
Low capacitance double bidirectional ESD protection diodes in SOT23
; 20 s
001aaa630
t ( s)
Rev. 02 — 25 August 2009
40
Fig 2.
100 %
10 %
90 %
ESD pulse waveform according to
IEC 61000-4-2
I
PP
PESDxL2BT series
t
r
30 ns
0.7 ns to 1 ns
60 ns
© NXP B.V. 2009. All rights reserved.
001aaa631
t
4 of 14