ESDALC6V1-5T6 STMicroelectronics, ESDALC6V1-5T6 Datasheet - Page 3
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ESDALC6V1-5T6
Manufacturer Part Number
ESDALC6V1-5T6
Description
TRANSIL ARRAY LOW CAP ESD UDFN
Manufacturer
STMicroelectronics
Specifications of ESDALC6V1-5T6
Voltage - Reverse Standoff (typ)
3V
Voltage - Breakdown
6.1V
Power (watts)
25W
Polarization
5 Channel Array - Unidirectional
Mounting Type
Surface Mount
Package / Case
6-µDFN
Polarity
Unidirectional
Channels
5 Channels
Operating Voltage
3 V
Breakdown Voltage
6.1 V
Termination Style
SMD/SMT
Peak Surge Current
2 A
Peak Pulse Power Dissipation
25 W
Capacitance
7 pF
Dimensions
1 mm W x 1 mm L x 0.4 mm H
Suppressor Type
Diode Arrays
Esd Protection Voltage
8KV@HBM/15KV@Air Gap/8KV@Contact Disc
Direction Type
Uni-Directional
Configuration
Quint
Mounting Style
Surface Mount
Leakage Current (max)
0.1uA
Capacitance Value
9pF
Operating Temperature Min Deg. C
-55C
Operating Temperature Max Deg. C
125C
Product Length (mm)
1mm
Product Depth (mm)
1mm
Product Height (mm)
0.35mm
Pin Count
6
Rad Hardened
No
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10291-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
ESDALC6V1-5T6
Figure 3.
Figure 5.
Figure 7.
10.0
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
15
14
13
12
11
10
1.0
0.1
9
8
7
6
5
4
3
2
1
0
0
C (pF)
0
P [T initial]/P [T initial = 25 °C]
5
I (A)
PP
PP
Wave 8/20 µs T= 25 °C
j
6
25
1
Relative variation of peak pulse
power versus initial junction
temperature
Clamping voltage versus peak
pulse current (typical values,
exponential waveform)
Junction capacitance versus
reverse voltage applied
(typical values)
PP
7
j
50
8
2
IO/IO
75
9
3
IO/GND
10
100
11
V
OSC
4
125
F = 1 MHz
T = 25 °C
J
= 30 mV
Doc ID 16741 Rev 2
12
V
T j (°C)
CL
(V)
RMS
150
V
13
5
Figure 4.
Figure 6.
Figure 8.
1000
10.00
100
100
1.00
0.10
0.01
0.00
10
10
1
1
25
0.00
I [T ] / I [T = 25 °C]
1
R
P (W)
V = 3 V
I (A)
FM
PP
R
j
R
0.50
j
Peak pulse power versus
exponential pulse duration
Forward voltage drop versus peak
forward current (typical values)
Relative variation of leakage
current versus junction
temperature (typical values)
50
1.00
10
1.50
t (µs)
75
p
2.00
100
Characteristics
100
T initial = 25 °C
T initial = 25 °C
j
j
2.50
T (°C)
V (V)
j
FM
3.00
1000
125
3/11