MMBZ15VAL,215 NXP Semiconductors, MMBZ15VAL,215 Datasheet - Page 7

• Manufacturer Part Number: MMBZ15VAL,215
• Description: DIODE ESD PROT DBL 12V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ15VAL,215

• Voltage - Reverse Standoff (typ): 12V
• Voltage - Breakdown: 14.25V
• Power (watts): 40W
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934061797215

NXP Semiconductors
MMBZXVAL_SER_1
Product data sheet
Table 10.
T
[1]
[2]
Symbol Parameter
C
V
S
amb
CL
Z
d
In accordance with IEC 61643-321(10/1000 s current waveform).
Measured from pin 1 or 2 to pin 3.
= 25 C unless otherwise specified.
diode capacitance
clamping voltage
temperature coefficient I
Characteristics
MMBZ12VAL
MMBZ12VAL/DG
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
MMBZ33VAL
MMBZ33VAL/DG
MMBZ12VAL
MMBZ12VAL/DG
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
MMBZ33VAL
MMBZ33VAL/DG
MMBZ12VAL
MMBZ12VAL/DG
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
MMBZ33VAL
MMBZ33VAL/DG
Double ESD protection diodes for transient overvoltage suppression
Rev. 01 — 1 September 2008
…continued
Conditions
f = 1 MHz; V
I
I
I
I
I
I
PPM
PPM
PPM
PPM
PPM
PPM
Z
= 1 mA
= 2.35 A
= 1.9 A
= 1.6 A
= 1.4 A
= 1 A
= 0.87 A
R
= 0 V
MMBZxVAL series
[1][2]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
110
85
70
65
48
45
-
-
-
-
-
-
8.2
11
14
15.8
23
29.8
© NXP B.V. 2008. All rights reserved.
Max
140
105
90
80
60
55
17
21
25
28
40
46
-
-
-
-
-
-
Unit
pF
pF
pF
pF
pF
pF
V
V
V
V
V
V
mV/K
mV/K
mV/K
mV/K
mV/K
mV/K
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