BZA968A,115 NXP Semiconductors, BZA968A,115 Datasheet - Page 3

• Manufacturer Part Number: BZA968A,115
• Description: TVS ZENER QUAD 6.8V SOT665
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BZA968A,115

• Package / Case: SOT-665
• Voltage - Reverse Standoff (typ): 4.3V
• Voltage - Breakdown: 6.46V
• Power (watts): 14W
• Polarization: 4 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Operating Voltage: 7.14 V
• Breakdown Voltage: 6.8 V
• Termination Style: SMD/SMT
• Peak Surge Current: 2 A
• Peak Pulse Power Dissipation: 335 mW
• Capacitance: 90 pF
• Dimensions: 1.3 mm W x 1.7 mm L x 0.6 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056531115; BZA968A T/R; BZA968A T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Solder point of common anode (pin 2).
ELECTRICAL CHARACTERISTICS
T
Table 1 Per type; BZ956A to BZA968A
T
2001 Sep 03
R
R
V
I
BZA956A
BZA962A
BZA968A
SYMBOL
SYMBOL
j
j
R
= 25 °C unless otherwise specified.
F
= 25 °C unless otherwise specified.
Quadruple ESD transient voltage
suppressor
th j-a
th j-s
TYPE
thermal resistance from junction to ambient
thermal resistance from junction to solder
point; note 1
forward voltage
reverse current
5.32
5.89
6.46
MIN.
BZA956A
BZA962A
BZA968A
WORKING VOLTAGE
at I
PARAMETER
V
Z
5.6
6.2
6.8
TYP.
Z
= 1 mA
(V)
PARAMETER
MAX.
5.88
6.51
7.14
DIFFERENTIAL
RESISTANCE
at I
I
V
V
V
r
Z
F
MAX.
dif
R
R
R
400
300
200
= 1 mA
= 200 mA
= 3 V
= 4 V
= 4.3 V
(Ω)
all diodes loaded
one diode loaded
all diodes loaded
3
S
CONDITIONS
Z
I
Z
COEFF.
TEMP.
(mV/K) at
= 1 mA
TYP.
0.3
1.6
2.2
CONDITIONS
DIODE CAP.
at f = 1 MHz;
C
125
105
V
MAX.
90
d
R
(pF)
= 0
BZA900A-series
1.3
1000
500
100
I
VALUE
ZSM
MAX.
NON-REPETITIVE
PEAK REVERSE
370
135
125
T
(A) at t
amb
CURRENT
Product data sheet
MAX.
= 25 ×°C
2.2
2.1
2.0
V
nA
nA
nA
p
= 1 ms;
UNIT
UNIT
K/W
K/W
K/W