MC9S08AW60CFGE Freescale Semiconductor, MC9S08AW60CFGE Datasheet - Page 306
![IC MCU 64K FLASH 44-LQFP](/photos/12/17/121739/mc9s08aw60cfde_sml.jpg)
MC9S08AW60CFGE
Manufacturer Part Number
MC9S08AW60CFGE
Description
IC MCU 64K FLASH 44-LQFP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet
1.MC9S08AW32CFDE.pdf
(324 pages)
Specifications of MC9S08AW60CFGE
Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
34
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
44-LQFP
Processor Series
S08AW
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
2 KB
Interface Type
SCI/SPI
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
34
Number Of Timers
8
Operating Supply Voltage
- 0.3 V to + 5.8 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMO9S08AW60E
Minimum Operating Temperature
- 40 C
On-chip Adc
8-ch x 10-bit
For Use With
DEMO9S08AW60E - DEMO BOARD FOR MC9S08AW60
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC9S08AW60CFGE
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Company:
Part Number:
MC9S08AW60CFGER
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
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Appendix A Electrical Characteristics and Timing Specifications
A.12
This section provides details about program/erase times and program-erase endurance for the FLASH
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see
306
1
2
3
4
5
Num
Typical values are based on characterization data at V
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information
supplied for calculating approximate time to program and erase.
Typical endurance for FLASH was evaluated for this product family on the 9S12Dx64. For additional information
on how Freescale Semiconductor defines typical endurance, please refer to Engineering Bulletin EB619/D, Typical
Endurance for Nonvolatile Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale Semiconductor defines
typical data retention, please refer to Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
10
1
2
3
4
6
8
5
7
9
FLASH Specifications
C
P
P
P
P
C
P
C
C
P
P
Supply voltage for program/erase
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Program/erase endurance
Data retention
T
T = 25°C
L
to T
H
= –40°C to + 125°C
Characteristic
5
3
3
Table A-16. FLASH Characteristics
2
MC9S08AW60 Data Sheet, Rev 2
4
3
3
DD
V
= 5.0 V, 25°C unless otherwise stated.
Symbol
prog/erase
V
f
t
t
t
t
t
t
FCLK
Burst
Page
Mass
D_ret
Fcyc
prog
Read
10,000
Min
150
2.7
2.7
Chapter 4,
15
—
5
20,000
4000
100,000
Typ
9
4
100
—
“Memory.”
1
Freescale Semiconductor
Max
6.67
200
5.5
5.5
—
—
—
cycles
DD
years
Unit
t
t
t
t
kHz
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
supply.
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