MC908AP32CBE Freescale Semiconductor, MC908AP32CBE Datasheet - Page 45

IC MCU 32K FLASH 8MHZ 42DIP

MC908AP32CBE

Manufacturer Part Number
MC908AP32CBE
Description
IC MCU 32K FLASH 8MHZ 42DIP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheets

Specifications of MC908AP32CBE

Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
I²C, IRSCI, SCI, SPI
Peripherals
LED, LVD, POR, PWM
Number Of I /o
30
Program Memory Size
32KB (32K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
42-DIP (0.600", 15.24mm)
Controller Family/series
HC08
No. Of I/o's
30
Ram Memory Size
2KB
Cpu Speed
8MHz
No. Of Timers
2
Embedded Interface Type
I2C, SCI, SPI
Rohs Compliant
Yes
Processor Series
HC08AP
Core
HC08
Data Bus Width
8 bit
Data Ram Size
2 KB
Interface Type
SCI, SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
32
Number Of Timers
4
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
Development Tools By Supplier
FSICEBASE, DEMO908AP64E, M68CBL05CE
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
 Details
This program sequence is repeated throughout the memory until all data is programmed.
2.5.6 FLASH Protection
Due to the ability of the on-board charge pump to erase and program the FLASH memory in the target
application, provision is made to protect pages of memory from unintentional erase or program operations
due to system malfunction. This protection is done by use of a FLASH block protect register (FLBPR).
The FLBPR determines the range of the FLASH memory which is to be protected. The range of the
protected area starts from a location defined by FLBPR and ends to the bottom of the FLASH memory
($FFFF). When the memory is protected, the HVEN bit cannot be set in either erase or program
operations.
Freescale Semiconductor
10. Wait for time, t
11. Clear the HVEN bit.
12. After time, t
The time between each FLASH address change (step 6 to step 6), or the
time between the last FLASH addressed programmed to clearing the PGM
bit (step 6 to step 9), must not exceed the maximum programming time,
t
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order shown, other unrelated operations may
occur between the steps.
The mask option register ($FFCF) and the 48 bytes of user interrupt vectors
($FFD0–$FFFF) are always protected, regardless of the value in the
FLASH block protect register. A mass erase is required to erase these
locations.
prog
rcv
max.
nvh
(1 µs), the memory can be accessed in read mode again.
(5 µs).
MC68HC908AP Family Data Sheet, Rev. 4
NOTE
NOTE
NOTE
FLASH Memory
45

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