PIC16F882-I/SP Microchip Technology, PIC16F882-I/SP Datasheet - Page 241

• Manufacturer Part Number: PIC16F882-I/SP
• Description: IC PIC MCU FLASH 2KX14 28DIP
• Manufacturer: Microchip Technology
• Series: PIC® 16Fr

Specifications of PIC16F882-I/SP

• Program Memory Type: FLASH
• Program Memory Size: 3.5KB (2K x 14)
• Package / Case: 28-DIP (0.300", 7.62mm)
• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: I²C, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 24
• Eeprom Size: 128 x 8
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 5.5 V
• Data Converters: A/D 11x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Processor Series: PIC16F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 128 B
• Interface Type: EUSART/MSSP
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 28
• Number Of Timers: 3
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, DM164120-3
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 11-ch x 10-bit
• A/d Bit Size: 10 bit
• A/d Channels Available: 11
• Height: 3.3 mm
• Length: 34.67 mm
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 2 V
• Width: 7.24 mm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: DVA18XP280 - DEVICE ADAPTER 18F2220 PDIP 28LD
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

17.0
Absolute Maximum Ratings
Ambient temperature under bias..........................................................................................................-40° to +125°C
Storage temperature ........................................................................................................................ -65°C to +150°C
Voltage on V
Voltage on MCLR with respect to Vss ............................................................................................... -0.3V to +13.5V
Voltage on all other pins with respect to V
Total power dissipation
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin.................................................................................................... 25 mA
Maximum output current sourced by any I/O pin .............................................................................................. 25 mA
Maximum current sunk by PORTA, PORTB and PORTE (combined)
Maximum current sourced by PORTA, PORTB and PORTE (combined)
Maximum current sunk by PORTC and PORTD (combined)
Maximum current sourced by PORTC and PORTD (combined)
Note 1:
© 2006 Microchip Technology Inc.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure above maximum rating conditions for
extended periods may affect device reliability.
2:
ELECTRICAL SPECIFICATIONS
Power dissipation is calculated as follows: P
PORTD and PORTE are implemented on PIC16F886/PIC16F887 only.
DD
with respect to V
IK
(1)
OK
(V
DD
............................................................................................................................... 800 mW
I
SS
(Vo < 0 or Vo >V
< 0 or V
pin ....................................................................................................................... 250 mA
pin .................................................................................................................... 300 mA
SS
I
> V
................................................................................................... -0.3V to +6.5V
(†)
DD
SS
)
DD
........................................................................... -0.3V to (V
)
PIC16F882/883/884/886/887
Preliminary
DIS
= V
(2)
DD
..................................................................... 200 mA
(2)
x {I
................................................................ 200 mA
(2)
DD
........................................................ 200 mA
– ∑ I
(2)
.................................................. 200 mA
OH
} + ∑ {(V
DD
– V
OH
) x I
DS41291C-page 239
OH
} + ∑(V
DD
+ 0.3V)
20 mA
20 mA
O
l x I
OL
).