PIC18LF248-I/SP Microchip Technology, PIC18LF248-I/SP Datasheet - Page 341
![IC MCU CAN FLASH 8K LP 28DIP](/photos/6/59/65908/150-28-dip_sml.jpg)
PIC18LF248-I/SP
Manufacturer Part Number
PIC18LF248-I/SP
Description
IC MCU CAN FLASH 8K LP 28DIP
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets
1.PIC16F616T-ISL.pdf
(8 pages)
2.PIC18LF242-ISO.pdf
(36 pages)
3.PIC18F248-ISO.pdf
(402 pages)
4.PIC18F248-ISO.pdf
(8 pages)
Specifications of PIC18LF248-I/SP
Core Size
8-Bit
Program Memory Size
16KB (8K x 16)
Core Processor
PIC
Speed
40MHz
Connectivity
CAN, I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
22
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 5x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
28-DIP (0.300", 7.62mm)
Controller Family/series
PIC18
No. Of I/o's
22
Eeprom Memory Size
256Byte
Ram Memory Size
768Byte
Cpu Speed
40MHz
No. Of Timers
4
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
- PIC16F616T-ISL PDF datasheet
- PIC18LF242-ISO PDF datasheet #2
- PIC18F248-ISO PDF datasheet #3
- PIC18F248-ISO PDF datasheet #4
- Current page: 341 of 402
- Download datasheet (7Mb)
TABLE 27-2:
© 2006 Microchip Technology Inc.
DC Characteristics
D110
D113
D120
D120A
D121
D122
D123
D124
D124A
D130
D130A
D131
D132
D132A
D132B
D133
D133A
D133A
D134
Param
No.
† Data in “Typ” column is at 5.0V, 25 C unless otherwise stated. These parameters are for design guidance
*
V
I
E
E
V
T
T
T
T
E
E
V
V
V
V
T
T
T
T
DDP
Sym
DEW
RETD
REF
REF
IE
IW
IW
RETD
only and are not tested.
See Section 5.8 “Using the Data EEPROM” for more information.
PP
D
D
DRW
P
P
PR
IE
IW
PEW
DC CHARACTERISTICS: EEPROM AND ENHANCED FLASH
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Cell Endurance
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles to Data EEPROM before
Refresh*
Number of Total Erase/Write
Cycles before Refresh*
Program Flash Memory
Cell Endurance
Cell Endurance
V
V
V
or Write
V
ICSP Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Self-Timed Write Cycle Time
Characteristic Retention
DD
DD
DD
DD
DD
for Read/Write
for Read
for Block Erase
for Externally Timed Erase
for Self-Timed Write
Characteristic
PP
pin
Standard Operating Conditions
100K
100K
V
1000
V
V
9.00
10K
10K
Min
1M
4.5
4.5
40
40
—
—
—
—
MIN
MIN
MIN
1
Typ†
100K
100K
10M
10K
1M
1M
—
—
—
—
—
—
—
—
—
—
4
4
2
13.25
Max
5.5
5.5
5.5
5.5
5.5
10
—
—
—
—
—
—
—
—
—
—
—
—
Cycles -40°C to +85°C
Cycles +85°C to +125°C
Units
Year Provided no other specifications
Year Provided no other specifications
E/W
E/W
E/W
E/W
mA
ms
ms
ms
ms
V
V
V
V
V
V
-40°C to +85°C
+85°C to +125°C
Using EECON to read/write
V
are violated
-40°C to +85°C
+85°C to +125°C
V
Using ICSP™ port
Using ICSP port
V
V
V
are violated
MIN
MIN
MIN
DD
DD
PIC18FXX8
= Minimum operating voltage
= Minimum operating voltage
= Minimum operating voltage
4.5V
4.5V
Conditions
DS41159E-page 339
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