DF2378BVFQ35V Renesas Electronics America, DF2378BVFQ35V Datasheet - Page 301

IC H8S/2378 MCU FLASH 144-LQFP

DF2378BVFQ35V

Manufacturer Part Number
DF2378BVFQ35V
Description
IC H8S/2378 MCU FLASH 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2378BVFQ35V

Core Processor
H8S/2000
Core Size
16-Bit
Speed
35MHz
Connectivity
I²C, IrDA, SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
97
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
32K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 16x10b; D/A 6x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
For Use With
YLCDRSK2378 - KIT DEV EVAL H8S/2378 LCDYR0K42378FC000BA - KIT EVAL FOR H8S/2378HS0005KCU11H - EMULATOR E10A-USB H8S(X),SH2(A)EDK2378 - DEV EVAL KIT FOR H8S/2378
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2378BVFQ35V
Manufacturer:
Renesas Electronics America
Quantity:
135
Part Number:
DF2378BVFQ35V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Section 6 Bus Controller (BSC)
RAS Down Mode: Even when burst operation is selected, it may happen that access to continuous
synchronous DRAM space is not continuous, but is interrupted by access to another space. In this
case, if the row address active state is held during the access to the other space, the read or write
command can be issued without ACTV command generation similarly to DRAM RAS down
mode.
To select RAS down mode, set the BE bit to 1 in DRAMCR regardless of the RCDM bit settings.
The operation corresponding to DRAM RAS up mode is not supported by this LSI.
Figure 6.53 shows an example of the timing in RAS down mode.
Note, however, the next continuous synchronous DRAM space access is a full access if:
• a refresh operation is initiated in the RAS down state
• self-refreshing is performed
• the chip enters software standby mode
• the external bus is released
• the BE bit is cleared to 0
• the mode register of the synchronous DRAM is set
There is synchronous DRAM in which time of the active state of each bank is restricted. If it is not
guaranteed that other row address are accessed in a period in which program execution ensures the
value (software standby, sleep, etc.), auto refresh or self refresh must be set, and the restrictions of
the maximum active state time of each bank must be satisfied. When refresh is not used, programs
must be developed so that the bank is not in the active state for more than the specified time.
Rev.7.00 Mar. 18, 2009 page 233 of 1136
REJ09B0109-0700

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