PIC16F636-E/ST Microchip Technology, PIC16F636-E/ST Datasheet - Page 172

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PIC16F636-E/ST

Manufacturer Part Number
PIC16F636-E/ST
Description
IC MCU FLASH 2KX14 14TSSOP
Manufacturer
Microchip Technology
Series
PIC® 16Fr

Specifications of PIC16F636-E/ST

Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Peripherals
Brown-out Detect/Reset, LVD, POR, WDT
Number Of I /o
11
Program Memory Size
3.5KB (2K x 14)
Program Memory Type
FLASH
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
14-TSSOP
For Use With
AC162057 - MPLAB ICD 2 HEADER 14DIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Data Converters
-
Connectivity
-
PIC12F635/PIC16F636/639
15.3
DS41232D-page 170
DC CHARACTERISTICS
D020
D021
D022A
D022B
D023
D024A
D024B
D025
Note 1:
Param
No.
2:
3:
4:
† Data in “Typ” column is at 5.0V, 25 C unless otherwise stated. These parameters are for design guidance only
DC Characteristics: PIC12F635/PIC16F636-E (Extended) (Continued)
I
PD
and are not tested.
The test conditions for all I
rail-to-rail; all I/O pins tri-stated, pulled to V
The supply current is mainly a function of the operating voltage and frequency. Other factors, such as I/O pin
loading and switching rate, oscillator type, internal code execution pattern and temperature, also have an impact
on the current consumption.
The peripheral current is the sum of the base I
eral is enabled. The peripheral
limit. Max values should be used when calculating total current consumption.
The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to V
Sym
Power-down Base
Current
Device Characteristics
(4)
DD
measurements in Active Operation mode are: OSC1 = external square wave, from
current can be determined by subtracting the base I
Standard Operating Conditions (unless otherwise stated)
Operating temperature
Min
DD
; MCLR = V
DD
Typ†
or I
0.15
0.20
0.35
32.3
120
1.0
2.0
3.0
4.5
5.0
6.0
42
85
22
25
33
60
30
45
75
39
59
98
PD
and the additional current consumed when this periph-
DD
Max
17.5
122
160
124
1.2
1.5
1.8
19
22
60
48
55
65
45
78
36
55
95
47
72
25
30
40
; WDT disabled.
Units
-40 C
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
A
T
V
2.0
3.0
5.0
2.0
3.0
5.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
2.0
3.0
5.0
A
DD
© 2007 Microchip Technology Inc.
+125 C for extended
WDT, BOR, Comparators,
V
WDT Current
BOR Current
PLVD Current
Comparator Current
CV
(high-range)
CV
(low-range)
T1OSC Current
DD
REF
Conditions
REF
REF
or I
and T1OSC disabled
PD
Current
Current
DD
current from this
.
Note
(1)
(1)
(1)
(1)
(3)
(1)

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