PIC16F636-E/ST Microchip Technology, PIC16F636-E/ST Datasheet - Page 178

• Manufacturer Part Number: PIC16F636-E/ST
• Description: IC MCU FLASH 2KX14 14TSSOP
• Manufacturer: Microchip Technology
• Series: PIC® 16Fr

Specifications of PIC16F636-E/ST

• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 20MHz
• Peripherals: Brown-out Detect/Reset, LVD, POR, WDT
• Number Of I /o: 11
• Program Memory Size: 3.5KB (2K x 14)
• Program Memory Type: FLASH
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 2 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 14-TSSOP
• For Use With: AC162057 - MPLAB ICD 2 HEADER 14DIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Connectivity: -

PIC12F635/PIC16F636/639
15.7
DS41232D-page 176
DC CHARACTERISTICS
D090
D092
D093
D100
D101
D102
D120
D120A
D121
D122
D123
D124
D130
D130A
D131
D132
D133
D134
Note
Param
No.
1:
2:
3:
4:
*
†
V
COSC2
C
I
E
E
V
T
T
T
E
E
V
V
T
T
ULP
DC Characteristics: PIC16F639-I (Industrial) (Continued)
OH
DEW
RETD
REF
PEW
RETD
IO
D
D
DRW
P
D
PR
PEW
Sym
These parameters are characterized but not tested.
Data in “Typ” column is at 3.0V, 25 C unless otherwise stated. These parameters are for design guidance only and are not tested.
In RC oscillator configuration, the OSC1/CLKIN pin is a Schmitt Trigger input. It is not recommended to use an external clock in RC
mode.
Negative current is defined as current sourced by the pin.
The leakage current on the MCLR pin is strongly dependent on the applied voltage level. The specified levels represent normal operating
conditions. Higher leakage current may be measured at different input voltages.
See Section 9.4.1 “Using the Data EEPROM” for additional information
Output High Voltage
I/O ports
OSC2/CLKOUT (RC mode)
Digital Output High Voltage
LFDATA/SDIO for Analog Front-End
(AFE)
Capacitive Loading Specs on
Output Pins
OSC2 pin
All I/O pins
Ultra Low-power Wake-up Current
Data EEPROM Memory
Byte Endurance
Byte Endurance
V
Erase/Write cycle time
Characteristic Retention
Number of Total Erase/Write Cycles
before Refresh
Program Flash Memory
Cell Endurance
Cell Endurance
V
V
Erase/Write cycle time
Characteristic Retention
DD
DD
DD
for Read/Write
for Read
for Erase/Write
Characteristic
(1)
Standard Operating Conditions (unless otherwise stated)
Operating temperature
Supply Voltage
V
V
V
DD
DD
DD
100K
V
V
10K
10K
Min
1M
1K
4.5
40
40
—
—
—
—
—
MIN
MIN
– 0.7
– 0.7
– 0.5
100K
100K
Typ†
10M
10K
200
1M
—
—
—
—
—
—
—
—
—
—
5
2
-40°C
2.0V
Max
15*
50*
5.5
5.5
5.5
2.5
—
—
—
—
—
—
—
—
—
—
—
6
V
T
DD
A
Units
Year
Year
E/W
E/W
E/W
E/W
E/W
ms
ms
pF
pF
nA
V
V
V
V
V
V
+85°C for industrial
3.6V
© 2007 Microchip Technology Inc.
I
I
I
Analog Front-End (AFE) section
I
In XT, HS and LP modes when
external clock is used to drive OSC1
-40 C
+85°C
Using EECON1 to read/write
V
Provided no other specifications are
violated
-40 C
-40 C
+85°C
V
Provided no other specifications are
violated
OH
OH
OH
OH
MIN
MIN
= -3.0 mA, V
= -1.3 mA, V
= -1.0 mA, V
= -400 A, V
= Minimum operating voltage
= Minimum operating voltage
T
T
T
T
T
A
A
A
A
A
Conditions
+85°C
+85°C
+85°C
+125°C
+125°C
DD
DD
DD
DD
= 3.6V (Ind.)
= 3.6V (Ind.)
= 3.6V (Ext.)
= 2.0V