ATTINY44-20MUR Atmel, ATTINY44-20MUR Datasheet - Page 19
ATTINY44-20MUR
Manufacturer Part Number
ATTINY44-20MUR
Description
MCU AVR 4KB FLASH 20MHZ 20QFN
Manufacturer
Atmel
Series
AVR® ATtinyr
Datasheet
1.ATTINY24-20MU.pdf
(238 pages)
Specifications of ATTINY44-20MUR
Core Processor
AVR
Core Size
8-Bit
Speed
20MHz
Connectivity
USI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
12
Program Memory Size
4KB (2K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATTINY44-20MUR
Manufacturer:
ATMEL
Quantity:
2 100
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5.3.7
8006K–AVR–10/10
Preventing EEPROM Corruption
The next code examples show assembly and C functions for reading the EEPROM. The exam-
ples assume that interrupts are controlled so that no interrupts will occur during execution of
these functions.
Note:
During periods of low V
too low for the CPU and the EEPROM to operate properly. These issues are the same as for
board level systems using EEPROM, and the same design solutions should be applied.
An EEPROM data corruption can be caused by two situations when the voltage is too low. First,
a regular write sequence to the EEPROM requires a minimum voltage to operate correctly. Sec-
ondly, the CPU itself can execute instructions incorrectly, if the supply voltage is too low.
EEPROM data corruption can easily be avoided by following this design recommendation:
Keep the AVR RESET active (low) during periods of insufficient power supply voltage. This can
be done by enabling the internal Brown-out Detector (BOD). If the detection level of the internal
BOD does not match the needed detection level, an external low V
Assembly Code Example
C Code Example
EEPROM_read:
unsigned char EEPROM_read(unsigned int ucAddress)
{
}
; Wait for completion of previous write
sbic EECR, EEPE
rjmp EEPROM_read
; Set up address (r18:r17) in address registers
out EEARH, r18
out EEARL, r17
; Start eeprom read by writing EERE
sbi EECR, EERE
; Read data from data register
in
ret
/* Wait for completion of previous write */
while(EECR & (1<<EEPE))
/* Set up address register */
EEAR = ucAddress;
/* Start eeprom read by writing EERE */
EECR |= (1<<EERE);
/* Return data from data register */
return EEDR;
See
;
“Code Examples” on page
r16, EEDR
CC
, the EEPROM data can be corrupted because the supply voltage is
6.
CC
ATtiny24/44/84
reset protection circuit can
19
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