PIC18LF2420-I/SP Microchip Technology, PIC18LF2420-I/SP Datasheet - Page 339

IC MCU FLASH 8KX16 28-DIP

PIC18LF2420-I/SP

Manufacturer Part Number
PIC18LF2420-I/SP
Description
IC MCU FLASH 8KX16 28-DIP
Manufacturer
Microchip Technology
Series
PIC® 18Fr

Specifications of PIC18LF2420-I/SP

Core Size
8-Bit
Program Memory Size
16KB (8K x 16)
Core Processor
PIC
Speed
40MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Number Of I /o
25
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 10x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-DIP (0.300", 7.62mm)
Controller Family/series
PIC18
No. Of I/o's
25
Eeprom Memory Size
256Byte
Ram Memory Size
768Byte
Cpu Speed
40MHz
No. Of Timers
4
Package
28SPDIP
Device Core
PIC
Family Name
PIC18
Maximum Speed
40 MHz
Operating Supply Voltage
2.5|3.3|5 V
Data Bus Width
8 Bit
Number Of Programmable I/os
25
Interface Type
I2C/SPI/USART
On-chip Adc
10-chx10-bit
Number Of Timers
4
Core
PIC
Processor Series
PIC18LF
Maximum Clock Frequency
40 MHz
Data Ram Size
768 B
Data Rom Size
256 B
Mounting Style
Through Hole
Height
3.3 mm
Length
34.67 mm
Maximum Operating Temperature
+ 85 C
Minimum Operating Temperature
- 40 C
Supply Voltage (max)
5.5 V
Supply Voltage (min)
2 V
Width
7.24 mm
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
TABLE 26-1:
© 2008 Microchip Technology Inc.
DC CHARACTERISTICS
D120
D121
D122
D123
D124
D125
D130
D131
D132
D132A V
D132B V
D133
D133A T
D133A T
D134
D135
Note 1:
Param
No.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
E
V
T
T
T
I
E
V
V
T
T
I
DDP
DDP
Sym
RETD
REF
IE
IW
IW
RETD
D
DRW
DEW
P
PR
IE
IW
PEW
only and are not tested.
Refer to Section 7.8 “Using the Data EEPROM” for a more detailed discussion on data EEPROM
endurance.
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Supply Current during
Programming
Program Flash Memory
Cell Endurance
V
V
V
or Write
V
ICSP Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Self-Timed Write Cycle Time
Characteristic Retention
Supply Current during
Programming
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
DD
DD
for Read/Write
for Read
for Block Erase
for Externally Timed Erase
for Self-Timed Write
Characteristic
(1)
PIC18F2420/2520/4420/4520
Standard Operating Conditions (unless otherwise stated)
Operating temperature
100K
V
V
V
10K
Min
1M
3.0
4.5
40
40
MIN
MIN
MIN
1
100K
Typ†
10M
100
1M
10
10
4
4
2
Max
5.5
5.5
5.5
5.5
5.5
-40°C ≤ T
Units
Year Provided no other
Year Provided no other
E/W -40°C to +85°C
E/W -40°C to +85°C
E/W -40°C to +85°C
mA
mA
ms
ms
ms
ms
V
V
V
V
V
A
Using EECON to read/write
V
voltage
specifications are violated
V
voltage
Using ICSP™ port, +25°C
Using ICSP™ port, +25°C
V
voltage
V
V
specifications are violated
≤ +85°C for industrial
MIN
MIN
MIN
DD
DD
≥ 4.5V
≥ 4.5V, +25°C
= Minimum operating
= Minimum operating
= Minimum operating
Conditions
DS39631E-page 337

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