STM8S103F3U6TR STMicroelectronics, STM8S103F3U6TR Datasheet - Page 81
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STM8S103F3U6TR
Manufacturer Part Number
STM8S103F3U6TR
Description
MCU 8BIT 8KB FLASH 20-UFQFPN
Manufacturer
STMicroelectronics
Series
STM8Sr
Datasheet
1.STM8S103F2P6TR.pdf
(113 pages)
Specifications of STM8S103F3U6TR
Core Processor
STM8
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
16
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Eeprom Size
640 x 8
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.95 V ~ 5.5 V
Data Converters
A/D 5x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-VFQFN, 20-VFQFPN
Processor Series
STM8S10x
Core
STM8
3rd Party Development Tools
EWSTM8
Development Tools By Supplier
STM8/128-MCKIT, STM8S-DISCOVERY, ST-LINK, STICE-SYS001, STX-RLINK
For Use With
497-10593 - KIT STARTER FOR STM8S207/8 SER
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM8S103F3U6TR
Manufacturer:
MAXIM
Quantity:
1 400
Company:
Part Number:
STM8S103F3U6TR
Manufacturer:
STMicroelectronics
Quantity:
10 000
STM8S103K3 STM8S103F3 STM8S103F2
1. Measurement points are made at CMOS levels: 0.3 VDD and 0.7 VDD.
(1)
(2)
(3)
production.
(4)
time to validate the data.
(5)
maximum time to put the data in Hi-Z.
Min time is for the minimum time to drive the output and the max time is for the maximum
Parameters are given by selecting 10 MHz I/O output frequency.
Data characterization in progress.
Values based on design simulation and/or characterization results, and not tested in
Min time is for the minimum time to invalidate the output and the max time is for the
OUT P UT
OUT P UT
NSS input
NSS input
CPHA= 0
CPOL=0
CPHA= 0
CPOL=1
CPHA=1
CPOL=0
CPHA=1
CPOL=1
I NPUT
I NPUT
MISO
MOSI
MISO
MOSI
t SU(NSS)
t a(SO)
t SU(NSS)
t a(SO)
Figure 39: SPI timing diagram - slave mode and CPHA = 0
Figure 40: SPI timing diagram - slave mode and CPHA = 1
t su(SI)
t w(SCKH)
t w(SCKL)
t w(SCKH)
t w(SCKL)
t su(SI)
MS B O UT
t v(SO)
M SB IN
M SB IN
t h(SI)
MS B O UT
DocID15441 Rev 6
t c(SCK)
t v(SO)
t h(SI)
t c(SCK)
BI T6 OUT
B I T1 IN
t h(SO)
B I T1 IN
BI T6 OUT
t h(SO)
LSB IN
t r(SCK)
t f(SCK)
LSB OUT
Electrical characteristics
t r(SCK)
t f(SCK)
t h(NSS)
t h(NSS)
LSB IN
LSB OUT
t dis(SO)
t dis(SO)
ai14134
ai14135
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