S9S12P96J0MFT Freescale Semiconductor, S9S12P96J0MFT Datasheet - Page 426
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S9S12P96J0MFT
Manufacturer Part Number
S9S12P96J0MFT
Description
MCU 96K FLASH AUTO 48-QFN
Manufacturer
Freescale Semiconductor
Series
HCS12r
Datasheet
1.S9S12P32J0MFT.pdf
(566 pages)
Specifications of S9S12P96J0MFT
Core Processor
HCS12
Core Size
16-Bit
Speed
32MHz
Connectivity
CAN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
34
Program Memory Size
96KB (96K x 8)
Program Memory Type
FLASH
Eeprom Size
4K x 8
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
1.72 V ~ 5.5 V
Data Converters
A/D 10x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
48-QFN Exposed Pad
Processor Series
S12P
Core
HCS12
3rd Party Development Tools
EWHCS12
Development Tools By Supplier
KIT33812ECUEVME, DEMO9S12PFAME
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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The Flash memory may be read as bytes, aligned words, or misaligned words. Read access time is one bus
cycle for bytes and aligned words, and two bus cycles for misaligned words. For Flash memory, an erased
bit reads 1 and a programmed bit reads 0.
It is possible to read from P-Flash memory while some commands are executing on D-Flash memory. It
is not possible to read from D-Flash memory while a command is executing on P-Flash memory.
Simultaneous P-Flash and D-Flash operations are discussed in
Both P-Flash and D-Flash memories are implemented with Error Correction Codes (ECC) that can resolve
single bit faults and detect double bit faults. For P-Flash memory, the ECC implementation requires that
programming be done on an aligned 8 byte basis (a Flash phrase). Since P-Flash memory is always read
by half-phrase, only one single bit fault in an aligned 4 byte half-phrase containing the byte or word
accessed will be corrected.
13.1.1
Command Write Sequence — An MCU instruction sequence to execute built-in algorithms (including
program and erase) on the Flash memory.
D-Flash Memory — The D-Flash memory constitutes the nonvolatile memory store for data.
D-Flash Sector — The D-Flash sector is the smallest portion of the D-Flash memory that can be erased.
The D-Flash sector consists of four 64 byte rows for a total of 256 bytes.
NVM Command Mode — An NVM mode using the CPU to setup the FCCOB register to pass parameters
required for Flash command execution.
Phrase — An aligned group of four 16-bit words within the P-Flash memory. Each phrase includes two
sets of aligned double words with each set including 7 ECC bits for single bit fault correction and double
bit fault detection within each double word.
P-Flash Memory — The P-Flash memory constitutes the main nonvolatile memory store for applications.
P-Flash Sector — The P-Flash sector is the smallest portion of the P-Flash memory that can be erased.
Each P-Flash sector contains 512 bytes.
Program IFR — Nonvolatile information register located in the P-Flash block that contains the Device
ID, Version ID, and the Program Once field.
Freescale Semiconductor
Glossary
A Flash word or phrase must be in the erased state before being
programmed. Cumulative programming of bits within a Flash word or
phrase is not allowed.
S12P-Family Reference Manual, Rev. 1.13
CAUTION
Section
13.4.4.
426
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