MCF52274CLU120 Freescale Semiconductor, MCF52274CLU120 Datasheet - Page 18

• Manufacturer Part Number: MCF52274CLU120
• Description: MCU 32-BIT LCD TOUCH 176-LQFP
• Manufacturer: Freescale Semiconductor
• Series: MCF5227xr

Specifications of MCF52274CLU120

• Core Processor: Coldfire V2
• Core Size: 32-Bit
• Speed: 120MHz
• Connectivity: CAN, EBI/EMI, I²C, SPI, SSI, UART/USART, USB OTG
• Peripherals: DMA, LCD, PWM, WDT
• Number Of I /o: 47
• Program Memory Type: ROMless
• Ram Size: 128K x 8
• Voltage - Supply (vcc/vdd): 1.4 V ~ 1.6 V
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 176-LQFP
• Family Name: MCF5227x
• Device Core: ColdFire
• Device Core Size: 16b
• Frequency (max): 120MHz
• Instruction Set Architecture: RISC
• Supply Voltage 1 (typ): 1.5/1.8/2.5/3.3V
• Operating Supply Voltage (max): 1.6/3.6V
• Operating Supply Voltage (min): 1.4/1.7/3V
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 176
• Package Type: LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Program Memory Size: -
• Data Converters: -
• Lead Free Status / Rohs Status: Compliant

Electrical Characteristics
5.3
5.4
18
Core Supply Voltage
PLL Supply Voltage
RTC Supply Voltage
CMOS Pad Supply Voltage
SDRAM and FlexBus Supply Voltage
USB Supply Voltage
Oscillator Supply Voltage
CMOS Input High Voltage
CMOS Input Low Voltage
CMOS Output High Voltage
CMOS Output Low Voltage
SDRAM and FlexBus Input High Voltage
SDRAM and FlexBus Input Low Voltage
Mobile DDR/Bus Pad Supply Voltage (nominal 1.8V)
DDR/Bus Pad Supply Voltage (nominal 2.5V)
SDR/Bus Pad Supply Voltage (nominal 3.3V)
I
I
Mobile DDR/Bus Input High Voltage (nominal 1.8V)
DDR/Bus Pad Supply Voltage (nominal 2.5V)
SDR/Bus Pad Supply Voltage (nominal 3.3V)
Mobile DDR/Bus Input High Voltage (nominal 1.8V)
DDR/Bus Pad Supply Voltage (nominal 2.5V)
SDR/Bus Pad Supply Voltage (nominal 3.3V)
OH
OL
= 5.0 mA
= –5.0 mA
ESD Protection
DC Electrical Specifications
1
2
ESD Target for Human Body Model
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits.
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification requirements. Complete DC parametric and functional testing is performed per
applicable device specification at room temperature followed by hot temperature, unless specified
otherwise in the device specification.
Characteristic
Characteristic
MCF5227x ColdFire
Table 9. ESD Protection Characteristics
Table 10. DC Electrical Specifications
®
Microprocessor Data Sheet, Rev. 8
Symbol
HBM
OSCV
RTCV
USBV
Symbol
PLLV
SDV
SDV
SDV
EV
EV
EV
IV
EV
EV
DD
OH
DD
OL
IH
IL
DD
DD
IH
IL
DD
DD
DD
1,2
EV
Value
2000
V
V
V
V
SS
SS
SS
SS
DD
2.25
1.35
Min
1.4
1.4
1.4
3.0
1.7
3.0
3.0
3.0
1.7
—
2
2
– 0.3
– 0.3
– 0.3
– 0.3
– 0.4
Freescale Semiconductor
SDV
SDV
SDV
EV
Unit
DD
V
Max
1.95
2.75
0.45
DD
DD
DD
1.6
1.6
1.6
3.6
3.6
3.6
3.6
0.8
0.4
0.8
0.8
—
+ 0.3
+ 0.3
+ 0.3
+ 0.3
Unit
V
V
V
V
V
V
V
V
V
V
V
V
V