DF2552BR26DV Renesas Electronics America, DF2552BR26DV Datasheet - Page 741

• Manufacturer Part Number: DF2552BR26DV
• Description: IC H8S/2552 MCU FLASH 176-LFBGA
• Manufacturer: Renesas Electronics America
• Series: H8® H8S/2500r

Specifications of DF2552BR26DV

• Core Processor: H8S/2000
• Core Size: 16-Bit
• Speed: 26MHz
• Connectivity: I²C, SCI
• Peripherals: POR, PWM, WDT
• Number Of I /o: 104
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 176-LFBGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

(4)
When flash memory is erased, the erase-block number on the user MAT must be passed to the
erasing program which is downloaded. This is set to the FEBS parameter (general register ER0).
One block is specified from the block number 0 to 15.
For details on the erasing processing procedure, see section 20.4.2, User Program Mode.
Bit
1
0
Erasure Execution
Bit Name
WA
SF
Initial
Value
⎯
⎯
R/W
R/W
R/W
Description
Write Address Error Detect
When the following items are specified as the start
address of the programming destination, an error occurs.
•
•
0: Setting of programming destination address is normal
1: Setting of programming destination address is
Success/Fail
Indicates whether the program processing is ended
normally or not.
0: Programming is ended normally (no error)
1: Programming is ended abnormally (error occurs)
abnormal
When the programming destination address in the
area other than flash memory is specified
When the specified address is not 128-byte
boundary (that is, A6 to A0 are not 0)
Rev. 6.00 Sep. 24, 2009 Page 693 of 928
Section 20 Flash Memory
REJ09B0099-0600