PIC16C770-E/SO Microchip Technology, PIC16C770-E/SO Datasheet - Page 149

• Manufacturer Part Number: PIC16C770-E/SO
• Description: IC MCU OTP 2KX14 A/D PWM 20SOIC
• Manufacturer: Microchip Technology
• Series: PIC® 16Cr

Specifications of PIC16C770-E/SO

• Core Processor: PIC
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: I²C, SPI
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 15
• Program Memory Size: 3.5KB (2K x 14)
• Program Memory Type: OTP
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 4 V ~ 5.5 V
• Data Converters: A/D 6x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 20-SOIC (7.5mm Width)
• For Use With: AC164028 - MODULE SKT PROMATEII 20SOIC/DIP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Other names: PIC16C770E/SO

15.0
Absolute Maximum Ratings †
Ambient temperature under bias................................................................................................................ .-55 to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on any pin with respect to V
Voltage on V
Maximum voltage between AV
Maximum voltage between AV
Voltage on MCLR with respect to V
Voltage on RA4 with respect to Vss ......................................................................................................... -0.3V to +10.5V
Total power dissipation (Note 1) ...............................................................................................................................1.0W
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA and PORTB (combined).................................................................................200 mA
Maximum current sourced by PORTA and PORTB (combined) ...........................................................................200 mA
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note 1: Power dissipation is calculated as follows: Pdis = V
2002 Microchip Technology Inc.
ELECTRICAL CHARACTERISTICS
DD
with respect to V
IK
OK
(V
DD
SS
I
(V
< 0 or V
pin ..............................................................................................................................250 mA
O
pin ...........................................................................................................................300 mA
DD
SS
< 0 or V
SS
and V
and V
I
SS
SS
> V
............................................................................................................ -0.3 to +7.5V
........................................................................................................ -0.3V to +8.5V
O
(except V
SS
DD
DD
> V
)
pins
pins
DD
)
DD
, MCLR and RA4) .......................................... -0.3V to (V
DD
x {I
PIC16C717/770/771
DD
-
I
OH
} +
{(V
DD
- V
OH
) x I
DS41120B-page 147
OH
} + (V
DD
O
+ 0.3V)
l x I
20 mA
20 mA
0.3V
0.3V
OL
).