ATTINY2313V-10SI Atmel, ATTINY2313V-10SI Datasheet - Page 16
![IC AVR MCU FLASH 2K 1.8V 20SOIC](/photos/6/80/68042/453-20-soic_sml.jpg)
ATTINY2313V-10SI
Manufacturer Part Number
ATTINY2313V-10SI
Description
IC AVR MCU FLASH 2K 1.8V 20SOIC
Manufacturer
Atmel
Series
AVR® ATtinyr
Specifications of ATTINY2313V-10SI
Core Processor
AVR
Core Size
8-Bit
Speed
10MHz
Connectivity
SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
18
Program Memory Size
2KB (1K x 16)
Program Memory Type
FLASH
Eeprom Size
128 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Data Converters
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATTINY2313V-10SI
Manufacturer:
ATMEL
Quantity:
560
Part Number:
ATTINY2313V-10SI
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
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EEPROM Data
Memory
EEPROM Read/Write
Access
The EEPROM Address
Register
16
ATtiny2313
Figure 10. On-chip Data SRAM Access Cycles
The ATtiny2313 contains 128 bytes of data EEPROM memory. It is organized as a separate
data space, in which single bytes can be read and written. The EEPROM has an endurance of at
least 100,000 write/erase cycles. The access between the EEPROM and the CPU is described
in the following, specifying the EEPROM Address Registers, the EEPROM Data Register, and
the EEPROM Control Register. For a detailed description of Serial data downloading to the
EEPROM, see
The EEPROM Access Registers are accessible in the I/O space.
The write access time for the EEPROM is given in
the user software detect when the next byte can be written. If the user code contains instructions
that write the EEPROM, some precautions must be taken. In heavily filtered power supplies, V
is likely to rise or fall slowly on power-up/down. This causes the device for some period of time to
run at a voltage lower than specified as minimum for the clock frequency used.
EEPROM Corruption” on page 20.
In order to prevent unintentional EEPROM writes, a specific write procedure must be followed.
Refer to the description of the EEPROM Control Register for details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next instruction is
executed. When the EEPROM is written, the CPU is halted for two clock cycles before the next
instruction is executed.
• Bit 7 – Res: Reserved Bit
This bit is reserved in the ATtiny2313 and will always read as zero.
Bit
Read/Write
Initial Value
Address
clk
page
Data
Data
R
7
–
0
WR
CPU
RD
172.
EEAR6
R/W
X
6
Compute Address
EEAR5
R/W
X
5
T1
Memory Access Instruction
for details on how to avoid problems in these situations.
EEAR4
R/W
X
4
EEAR3
R/W
Address valid
3
X
Table
T2
EEAR2
R/W
2
X
1. A self-timing function, however, lets
EEAR1
R/W
Next Instruction
1
X
T3
EEAR0
R/W
0
X
See “Preventing
EEAR
2543L–AVR–08/10
CC
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