MC68HC908LJ12CFU Freescale Semiconductor, MC68HC908LJ12CFU Datasheet - Page 406

• Manufacturer Part Number: MC68HC908LJ12CFU
• Description: IC MCU 12K FLASH 8MHZ 64-QFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC68HC908LJ12CFU

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: IRSCI, SPI
• Peripherals: LCD, LVD, POR, PWM
• Number Of I /o: 32
• Program Memory Size: 12KB (12K x 8)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 6x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-QFP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Eeprom Size: -

Electrical Specifications
23.18 FLASH Memory Characteristics
Technical Data
406
Notes:
Data retention voltage
Number of rows per page
Number of bytes per page
Read bus clock frequency
Page erase time
Mass erase time
PGM/ERASE to HVEN setup time
High-voltage hold time
High-voltage hold time (mass erase)
Program hold time
Program time
Address/data setup time
Address/data hold time
Recovery time
Cumulative HV period
Row erase endurance
Row program endurance
Data retention time
1. f
2. If the page erase time is longer than t
3. If the mass erase time is longer than t
4. It is defined as the time it needs before the FLASH can be read after turning off the high voltage charge pump, by clearing
5. t
6. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
7. The minimum row endurance value specifies each row of the FLASH memory is guaranteed to work for at least this many
8. The FLASH is guaranteed to retain data over the entire operating temperature range for at least the minimum time
memory.
memory.
HVEN to logic 0.
programmed twice before next erase.
erase/program cycles.
erase/program cycle.
specified.
Read
hv
is the cumulative high voltage programming time to the same row before next erase, and the same address can not be
is defined as the frequency range for which the FLASH memory can be read.
(8)
Table 23-12. FLASH Memory Electrical Characteristics
Characteristic
(6)
(7)
MErase
Erase
(Min.), there is no erase-disturb, but it reduces the endurance of the FLASH
(Min.), there is no erase-disturb, but is reduces the endurance of the FLASH
Electrical Specifications
t
Symbol
t
MErase
f
Erase
Read
V
t
t
t
t
rcv
t
t
t
t
hv
t
Prog
nvhl
RDR
adh
nvs
nvh
pgs
ads
—
—
—
(5)
(4)
(1)
(2)
(3)
Min.
100
10k
10k
32k
1.3
10
30
10
—
—
—
1
4
5
5
1
MC68HC908LJ12
128
2
Freescale Semiconductor
Max.
8M
40
30
30
—
—
—
—
—
—
—
—
—
—
—
25
—
Cycles
Cycles
Bytes
Rows
Years
Unit
Rev. 2.1
ms
ms
ms
Hz
µs
µs
µs
µs
µs
µs
ns
ns
V