BD5242G-TR Rohm Semiconductor, BD5242G-TR Datasheet - Page 2

• Manufacturer Part Number: BD5242G-TR
• Description: IC DETECTOR VOLT 4.2V ODRN 5SSOP
• Manufacturer: Rohm Semiconductor
• Type: Simple Reset/Power-On Resetr
• Series: -r

Specifications of BD5242G-TR

• Number Of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Voltage - Threshold: 4.2V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 5-SSOP
• Reset Timeout: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reset Timeout: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

 Absolute maximum ratings (Ta=25°C)
 Electrical characteristics (Unless Otherwise Specified Ta=-40 to 105°C)
© 2009 ROHM Co., Ltd. All rights reserved.
BD52□□G, BD52□□FVE, BD53□□G, BD53□□FVE series
Power Supply Voltage
Output Voltage
Power
Dissipation
Operating Temperature
Ambient Storage Temperature
Circuit Current when ON
www.rohm.com
Detection Voltage
Circuit Current when OFF
Operating Voltage Range
‘Low’ Output Current (Nch)
‘High’ Output Current (Pch)
Leak Current when OFF
CT pin Threshold Voltage
Output Delay Resistance
CT pin Output Current
Detection Voltage
Temperature coefficient
Hysteresis Voltage
V
R
Designed Guarantee. (Outgoing inspection is not done on all products.)
*1 Guarantee is Ta=25°C.
*1 Use above Ta=25°C results in a 5.4mW loss per degree.
*2 Use above Ta=25°C results in a 2.1mW loss per degree.
*3 When a ROHM standard circuit board (70mm×70mm×1.6mm glass epoxy board) is mounted.
S
L
: Pull-up resistor to be connected between V
(T) : Standard Detection Voltage (2.3V to 6.0V, 0.1V step)
Parameter
Parameter
Nch Open Drain Output
CMOS Output
SSOP5
VSOF5
V
Symbol
DET
V
V
V
Ileak
I
I
R
∆V
DD
DD
I
I
I
CTH
OPL
OH
DET
OL
CT
CT
/∆T Ta=-40°C to 105°C
S
1
2
OUT
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
DD
DD
DD
OL
OL
DS
DS
DS
DS
DS
DD
DD
DD
DD
DD
DD
CT
CT
DD
and power supply.
≤0.4V, Ta=25~105°C, R
≤0.4V, Ta=-40~25°C, R
=0.1V V
=0.5V V
=0.5V V
=0.5V V
=0.5V V
=0.5V V
=0.5V V
=HL, R
=V
=V
=V
=V
=V
=V
=V
=V
=LHL, R
*1*3
*2*3
DET
DET
DS
DET
DET
DET
DET
DET
=10V
-0.2V
+2.0V
×1.1, V
×1.1, V
×1.1, V
×1.1, V
×1.1 V
VDD-GND
Symbol
VOUT
L
DD
DD
DD
DD
DD
DD
DD
Topr
Tstg
=470kΩ
Pd
=1.2V
=2.4V
=4.8V V
=6.0V V
=8.0V V
=0.95V
=1.5V
L
DET
DET
DET
DET
=470kΩ
Condition
CT
=0.5V
=2.3-2.6V, R
=2.7-4.2V, R
=4.3-5.2V, R
=5.3-6.0V, R
V
V
V
V
V
V
V
V
2/9
DET
DET
DET
DET
DET
DET
DET
DET
DET
DET
DET
L
=2.3-3.1V
=3.2-4.2V
=4.3-5.2V
=5.3-6.0V
=2.3-3.1V
=3.2-4.2V
=4.3-5.2V
=5.3-6.0V
L
=470kΩ
=470kΩ
=2.3-4.2V
=4.3-5.2V
=5.3-6.0V
GND-0.3 ~ VDD+0.3
L
L
L
L
GND-0.3 ~ +10
=470kΩ
=470kΩ
=470kΩ
=470kΩ
-40 ~ +105
-55 ~ +125
-0.3 ~ +10
Limits
540
210
*1
*1
*1
*1
V
×0.99
×0.30
×0.30
×0.35
×0.40
×0.03
V
DET
0.95
1.20
Min.
V
V
V
V
150
0.4
2.0
0.7
0.9
1.1
5.5
15
DET
DD
DD
DD
DD
-
-
-
-
-
-
-
-
-
-
(T)
V
×0.40
×0.45
×0.50
×0.50
×0.05
Limit
DET
±100
V
Typ.
0.80
0.85
0.90
0.95
0.75
0.80
0.85
0.90
V
V
V
V
240
1.2
5.0
1.4
1.8
2.2
40
DET
9
Unit
mW
DD
DD
DD
DD
-
-
-
°C
°C
V
V
(T)
Technical Note
2009.06 - Rev.B
V
×1.01
×0.60
×0.60
×0.60
×0.60
×0.08
Max.
DET
±360
V
2.40
2.55
2.70
2.85
2.25
2.40
2.55
2.70
12.5
V
V
V
V
0.1
DET
DD
DD
DD
DD
-
-
-
-
-
-
-
-
-
(T)
ppm/°C
Unit
MΩ
mA
mA
µA
µA
µA
µA
V
V
V
V