CLP200M STMicroelectronics, CLP200M Datasheet - Page 8
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CLP200M
Manufacturer Part Number
CLP200M
Description
IC OVP/OCP TELECOM POWERSO-10
Manufacturer
STMicroelectronics
Datasheet
1.CLP200M.pdf
(21 pages)
Specifications of CLP200M
Voltage - Working
200V
Technology
Mixed Technology
Number Of Circuits
2
Applications
Telecommunications
Package / Case
PowerSO-10 Exposed Bottom Pad
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power (watts)
-
Voltage - Clamping
-
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Quantity
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CLP200M
3. CLP200M TESTS RESULTS ACCORDING TO
CCITT K20 RECOMMENDATIONS
3.1 CCITT K20 Recommendations
In respect with the CCITT recommendations, the
CLP200M has to withstand three kinds of distur-
bances.
3.1.1. Lightning simulation
(Test 2, table 2/K20)
This test shall be done in transversal and longitudi-
nal modes as shown in figure 10.
The test generator is the 10/700 s with 4kV of
peak voltage.
3.1.2. Power induction
(Test 3a and 3b, table 2/K20)
(see fig.11) are defined in the CCITT K20.
(*) Recommended value.
8/21
Fig. 10 : Transversal and longitudinal test
topologies.
Two kinds of tests using the same circuit topology
4kv
4kv
Vac(max) = 300V
Test 3b :
Vac(max) = 300V
Test 3a :
S2 operating and test duration = 200 ms.
S2 operating and test duration not defined.
20µF
20µF
50
50
TRANSVERSAL TEST
LONGITUDINAL TEST
15
15
RMS
RMS
, R1 = R2 = 600
(*), R1 = R2 = 200
0.2µF
0.2µF
25
25
25
A or B
B or A
A
B
UNDER
UNDER
TEST
ITEM
TEST
ITEM
E
E
Fig. 11 : Power induction test circuit.
3.1.3. Power contact (Test 3, table 1/K20)
This test shall be done with the test circuit of figure
12.
Vac(max) = 220V
tion and duration 15 min.
Fig. 12 : Power contact test circuit.
3.1.4. Acceptance criteria and number of tests
For the tests described in chapter 3.1.1., 3.1.2. and
3.1.3. two criteria are defined :
A: Equipment shall withstand the test without dam-
age and shall operate properly within the specified
limits.
B: A fire hazard should not occur in the equipment
as a result of the tests.
The criteria are affected to the different tests as
mentioned in the table 1.
RMS
S2
1µF
1µF
600
<10
600
<10
, with switch S in each posi-
100
S1
R1
R2
B
A
B
A
UNDER
TEST
ITEM
UNDER
TEST
ITEM
E
E