MMBZ5V6AL,215 NXP Semiconductors, MMBZ5V6AL,215 Datasheet - Page 4

• Manufacturer Part Number: MMBZ5V6AL,215
• Description: DIODE ESD PROT DBL 3V SOT23
• Manufacturer: NXP Semiconductors

Specifications of MMBZ5V6AL,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Power (watts): 24W
• Polarization: 2 Channel Array - Unidirectional
• Voltage - Breakdown: 5.32V
• Voltage - Reverse Standoff (typ): 3V
• Clamping Voltage: 8 V
• Current Rating: 3 A
• Channels: 1 Channel
• Breakdown Voltage: 5.6 V
• Capacitance: 210 pF
• Termination Style: Solder Tail
• Power Dissipation Pd: 290 mW
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

NXP Semiconductors
5. Limiting values
MMBZXAL_SER_2
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
I
Per device
P
PPM
PPM
tot
Limiting values
Parameter
rated peak pulse power
rated peak pulse current
total power dissipation
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
MMBZxAL series
MMBZ5V6AL
MMBZ6V2AL
MMBZ6V8AL
MMBZ9V1AL
MMBZ10VAL
MMBZ12VAL
MMBZ15VAL
MMBZ18VAL
MMBZ20VAL
MMBZ27VAL
MMBZ33VAL
Rev. 02 — 10 December 2009
Low capacitance unidirectional double ESD protection diodes
Conditions
t
t
T
p
p
amb
= 10/1000 μs
= 10/1000 μs
≤ 25 °C
MMBZxAL series
[1][2]
[1][2]
[3]
[4]
[4]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
24
40
3
2.76
2.5
1.7
1.7
2.35
1.9
1.6
1.4
1
0.87
265
290
360
Unit
W
W
A
A
A
A
A
A
A
A
A
A
A
mW
mW
mW
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