SI3585DV-T1-GE3 Vishay, SI3585DV-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI3585DV-T1-GE3
• Description: MOSFET N/P-CH 20V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3585DV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A, 1.5A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 3.2nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 1.8A
• Drain Source Voltage Vds: 20V
• Power Dissipation Pd: 750mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3585DV-T1-GE3TR

Document Number: 71184
S-03512—Rev. B, 04-Apr-01
0.5
0.4
0.3
0.2
0.1
0.0
4.5
3.6
2.7
1.8
0.9
0.0
10
8
6
4
2
0
0.0
0
0
V
I
V
D
DS
1
GS
= 2.4 A
On-Resistance vs. Drain Current
0.5
1
V
= 10 V
= 2.5 V
DS
Q
Output Characteristics
g
2
– Drain-to-Source Voltage (V)
I
D
– Total Gate Charge (nC)
– Drain Current (A)
Gate Charge
1.0
2
3
V
GS
3 V
= 4.5 thru 3.5 V
2.5 V
4
1.5
1.5 V
3
2 V
V
5
GS
2.0
4
= 4.5 V
6
_
2.5
5
7
300
250
200
150
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
10
50
8
6
4
2
0
0
0.0
–50
0
On-Resistance vs. Junction Temperature
–25
0.5
V
V
4
GS
DS
T
1.0
Transfer Characteristics
J
V
I
0
D
GS
– Junction Temperature (_C)
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
= 2.4 A
= 4.5 V
1.5
25
Capacitance
8
Vishay Siliconix
2.0
C
C
C
50
T
oss
iss
rss
25_C
C
= –55_C
12
2.5
75
Si3585DV
100
3.0
www.vishay.com
16
125_C
125
3.5
4.0
150
20
3