SI3585DV-T1-GE3 Vishay, SI3585DV-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI3585DV-T1-GE3
• Description: MOSFET N/P-CH 20V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3585DV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A, 1.5A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 3.2nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 1.8A
• Drain Source Voltage Vds: 20V
• Power Dissipation Pd: 750mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3585DV-T1-GE3TR

Document Number: 71184
S-03512—Rev. B, 04-Apr-01
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
8
6
4
2
0
V
0.01
0
0
0.1
GS
2
1
= 4.5 thru 4 V
10
V
–4
GS
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
On-Resistance vs. Drain Current
= 2.5 V
1
V
DS
Output Characteristics
2
– Drain-to-Source Voltage (V)
I
D
Single Pulse
– Drain Current (A)
2
3
10
4
–3
3
V
GS
Normalized Thermal Transient Impedance, Junction-to-Foot
= 3.6 V
V
5
GS
3.5 V
2.5 V
1.5 V
3 V
2 V
= 4.5 V
4
6
_
_
Square Wave Pulse Duration (sec)
5
7
10
–2
10
–1
450
360
270
180
90
8
6
4
2
0
0
0.0
0
C
rss
0.5
V
V
4
DS
GS
C
1.0
Transfer Characteristics
oss
– Drain-to-Source Voltage (V)
– Gate-to-Source Voltage (V)
1.5
Capacitance
1
8
Vishay Siliconix
2.0
T
25_C
C
C
iss
= –55_C
12
2.5
Si3585DV
3.0
www.vishay.com
16
125_C
10
3.5
4.0
20
5