SI3585DV-T1-GE3 Vishay, SI3585DV-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SI3585DV-T1-GE3
• Description: MOSFET N/P-CH 20V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3585DV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A, 1.5A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 3.2nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 1.8A
• Drain Source Voltage Vds: 20V
• Power Dissipation Pd: 750mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3585DV-T1-GE3TR

Si3585DV
Vishay Siliconix
www.vishay.com
4
–0.0
–0.2
–0.4
–0.6
0.1
0.4
0.2
10
1
0.00
–50
0.01
0.1
2
1
10
–4
–25
Source-Drain Diode Forward Voltage
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
T
J
V
= 150_C
0.3
SD
0
– Source-to-Drain Voltage (V)
T
Threshold Voltage
I
D
J
= 250 mA
– Temperature (_C)
25
10
0.6
–3
Single Pulse
50
0.9
Normalized Thermal Transient Impedance, Junction-to-Ambient
T
75
J
= 25_C
100
10
1.2
–2
125
_
1.5
Square Wave Pulse Duration (sec)
150
10
–1
1
0.40
0.32
0.24
0.16
0.08
0.00
8
6
4
2
0
0.01
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
I
D
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
1
V
= 1 A
P
GS
DM
JM
0.1
– Gate-to-Source Voltage (V)
– T
A
t
1
= P
Time (sec)
t
2
2
DM
Z
thJA
I
thJA
D
100
t
t
(t)
= 2.4 A
1
2
= 87_C/W
S-03512—Rev. B, 04-Apr-01
1
3
Document Number: 71184
600
4
10
5
30