SI3585DV-T1-GE3 Vishay, SI3585DV-T1-GE3 Datasheet - Page 7

• Manufacturer Part Number: SI3585DV-T1-GE3
• Description: MOSFET N/P-CH 20V 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3585DV-T1-GE3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A, 1.5A
• Vgs(th) (max) @ Id: 600mV @ 250µA
• Gate Charge (qg) @ Vgs: 3.2nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP (0.063", 1.60mm Width)
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 1.8A
• Drain Source Voltage Vds: 20V
• Power Dissipation Pd: 750mW
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3585DV-T1-GE3TR

Document Number: 71184
S-03512—Rev. B, 04-Apr-01
0.01
0.01
0.1
0.1
2
1
2
1
10
10
–4
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
–3
Single Pulse
10
–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
–2
_
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
–2
10
–1
10
1
–1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
– T
A
t
1
1
= P
t
2
DM
Vishay Siliconix
Z
thJA
thJA
100
t
t
(t)
1
2
= 87_C/W
Si3585DV
www.vishay.com
600
10
7