SI3585DV-T1-GE3 Vishay, SI3585DV-T1-GE3 Datasheet - Page 7

MOSFET N/P-CH 20V 6-TSOP

SI3585DV-T1-GE3

Manufacturer Part Number
SI3585DV-T1-GE3
Description
MOSFET N/P-CH 20V 6-TSOP
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI3585DV-T1-GE3

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
125 mOhm @ 2.4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
2A, 1.5A
Vgs(th) (max) @ Id
600mV @ 250µA
Gate Charge (qg) @ Vgs
3.2nC @ 4.5V
Power - Max
830mW
Mounting Type
Surface Mount
Package / Case
6-TSOP (0.063", 1.60mm Width)
Transistor Polarity
N And P Channel
Continuous Drain Current Id
1.8A
Drain Source Voltage Vds
20V
Power Dissipation Pd
750mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI3585DV-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3585DV-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Document Number: 71184
S-03512—Rev. B, 04-Apr-01
0.01
0.01
0.1
0.1
2
1
2
1
10
10
–4
–4
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
10
–3
Single Pulse
10
–3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10
–2
_
Square Wave Pulse Duration (sec)
Square Wave Pulse Duration (sec)
10
–2
10
–1
10
1
–1
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
10
Notes:
P
DM
JM
– T
A
t
1
1
= P
t
2
DM
Vishay Siliconix
Z
thJA
thJA
100
t
t
(t)
1
2
= 87_C/W
Si3585DV
www.vishay.com
600
10
7

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