SI4948BEY-T1-GE3 Vishay, SI4948BEY-T1-GE3 Datasheet - Page 2

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SI4948BEY-T1-GE3

Manufacturer Part Number
SI4948BEY-T1-GE3
Description
MOSFET P-CH D-S 60V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4948BEY-T1-GE3

Module Configuration
Dual
Transistor Polarity
P Channel
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-3V
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Power Dissipation
RoHS Compliant
Continuous Drain Current Id
-2.4A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4948BEY-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4948BEY-T1-GE3
Manufacturer:
VISHAY
Quantity:
25 000
Part Number:
SI4948BEY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4948BEY-T1-GE3
Quantity:
70 000
Si4948BEY
Vishay Siliconix
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
25
20
15
10
5
0
0
V
GS
= 10 V thru 5 V
1
a
a
V
2
Output Characteristics
DS
a
- Drain-to-Source Voltage (V)
J
= 25 °C, unless otherwise noted
3
a
4
Symbol
R
V
I
t
t
I
I
DS(on)
V
GS(th)
D(on)
Q
Q
d(on)
d(off)
GSS
DSS
g
Q
5
R
t
SD
t
t
rr
fs
gs
gd
r
f
g
g
6
4 V
3 V
V
DS
V
I
7
D
DS
≅ - 1 A, V
= - 30 V, V
I
= - 60 V, V
V
F
V
V
V
V
V
V
V
GS
DS
DS
8
GS
DS
= - 2 A, dI/dt = 100 A/µs
DS
DD
DS
I
S
Test Conditions
= - 4.5 V, I
= V
= - 5 V, V
= - 10 V, I
= - 15 V, I
= - 2 A, V
= 0 V, V
= - 60 V, V
= - 30 V, R
GEN
f = 1 MHz
GS
GS
GS
, I
= - 10 V, I
= - 10 V, R
D
GS
= 0 V, T
GS
GS
= - 250 µA
D
D
D
GS
L
= ± 20 V
= - 3.1 A
= - 3.1 A
= - 0.2 A
= - 10 V
= 0 V
= 30 Ω
= 0 V
J
D
= 70 °C
g
= - 3.1 A
= 6 Ω
25
20
15
10
5
0
0
1
Min.
- 25
V
- 1
GS
Transfer Characteristics
25 °C
- Gate-to-Source Voltage (V)
T
2
C
= 125 °C
0.100
0.126
Typ.
- 0.8
14.5
8.5
2.2
3.7
14
10
15
50
35
30
S09-1002-Rev. B, 01-Jun-09
3
Document Number: 72847
- 55 °C
4
± 100
0.120
0.150
Max.
- 1.2
- 10
- 3
- 1
22
15
22
75
55
50
5
Unit
nA
µA
nC
ns
Ω
Ω
V
A
S
V
6

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