SI4948BEY-T1-GE3 Vishay, SI4948BEY-T1-GE3 Datasheet - Page 5

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SI4948BEY-T1-GE3

Manufacturer Part Number
SI4948BEY-T1-GE3
Description
MOSFET P-CH D-S 60V 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4948BEY-T1-GE3

Module Configuration
Dual
Transistor Polarity
P Channel
Drain Source Voltage Vds
-60V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
-10V
Threshold Voltage Vgs Typ
-3V
Fet Type
2 P-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
120 mOhm @ 3.1A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
2.4A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Power - Max
1.4W
Mounting Type
Surface Mount
Package / Case
8-SOIC (0.154", 3.90mm Width)
Power Dissipation
RoHS Compliant
Continuous Drain Current Id
-2.4A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SI4948BEY-T1-GE3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4948BEY-T1-GE3
Manufacturer:
VISHAY
Quantity:
25 000
Part Number:
SI4948BEY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4948BEY-T1-GE3
Quantity:
70 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72847.
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
0.01
0.1
2
1
10 -
0.05
0.02
4
Duty Cycle = 0.5
0.2
0.1
Single Pulse
10 -
3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10 -
2
10 -
1
1
Vishay Siliconix
Si4948BEY
www.vishay.com
10
5

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