SI4948BEY-T1-GE3 Vishay, SI4948BEY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4948BEY-T1-GE3
• Description: MOSFET P-CH D-S 60V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4948BEY-T1-GE3

• Module Configuration: Dual
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -60V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -3V
• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Power Dissipation: RoHS Compliant
• Continuous Drain Current Id: -2.4A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4948BEY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72847.
Document Number: 72847
S09-1002-Rev. B, 01-Jun-09
0.01
0.1
2
1
10 -
0.05
0.02
4
Duty Cycle = 0.5
0.2
0.1
Single Pulse
10 -
3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10 -
2
10 -
1
1
Vishay Siliconix
Si4948BEY
www.vishay.com
10
5