NTD4960N-35G ON Semiconductor, NTD4960N-35G Datasheet

NTD4960N-35G

Manufacturer Part Number

NTD4960N-35G

Description

MOSFET N-CH 30V 11.1A IPAK

Manufacturer

ON Semiconductor

Datasheet

1.NTD4960N-35G.pdf (7 pages)

Specifications of NTD4960N-35G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

8 mOhm @ 30A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

8.9A

Vgs(th) (max) @ Id

2.5V @ 250µA

Gate Charge (qg) @ Vgs

22nC @ 10V

Input Capacitance (ciss) @ Vds

1300pF @ 15V

Power - Max

1.07W

Mounting Type

Through Hole

Package / Case

TO-251-3 Short Leads, IPak, TO-251AA

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

6.1 mOhms

Forward Transconductance Gfs (max / Min)

48 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

11.1 A

Power Dissipation

1.68 W

Maximum Operating Temperature

+ 85 C

Mounting Style

Through Hole

Fall Time

4 ns

Gate Charge Qg

11 nC

Rise Time

20 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTD4960N-35GOS

Current page: 1 of 7
Download datasheet (139Kb)

NTD4960N

Power MOSFET

30 V, 55 A, Single N−Channel, DPAK/IPAK

Features

•

Applications

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

June, 2010 − Rev. 2

MAXIMUM RATINGS

Drain−to−Source Voltage

Gate−to−Source Voltage

Continuous Drain

Current R

(Note 1)

Power Dissipation

Continuous Drain

Current R

(Note 2)

Power Dissipation

Continuous Drain

Current R

(Note 1)

Power Dissipation

Pulsed Drain

Current

Current Limited by Package

Operating Junction and Storage

Temperature

Source Current (Body Diode)

Drain to Source dV/dt

Single Pulse Drain−to−Source Avalanche

Energy (T

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

Compliant

Low R

Low Capacitance to Minimize Driver Losses

Optimized Gate Charge to Minimize Switching Losses

Three Package Variations for Design Flexibility

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

CPU Power Delivery

DC−DC Converters

Recommended for High Side (Control)

qJA

qJC

= 32 A

(Note 1)

(Note 2)

(Note 1)

DS(on)

qJA

qJC

, L = 0.1 mH, R

= 25°C, V

to Minimize Conduction Losses

Parameter

Steady

State

=10ms

= 50 V, V

= 25 W)

= 25°C unless otherwise stated)

= 10 V,

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

= 85°C

= 25°C

Symbol

DmaxPkg

dV/dt

EAS

DSS

STG

−55 to

Value

35.71

+175

11.1

1.68

1.07

29.7

51.2

±20

137

260

8.0

8.9

6.4

Unit

V/ns

°C

Gate

See detailed ordering and shipping information in the package

dimensions section on page 3 of this data sheet.

CASE 369AA

1 2

(Bent Lead)

STYLE 2

Drain

Drain 3

(BR)DSS

30 V

DPAK

Source

ORDERING INFORMATION

4960N = Device Code

MARKING DIAGRAMS

& PIN ASSIGNMENTS

N−CHANNEL MOSFET

http://onsemi.com

Gate

12.7 mW @ 4.5 V

(Straight Lead)

8.0 mW @ 10 V

CASE 369AC

= Year

= Work Week

= Pb−Free Package

DS(ON)

Drain

3 IPAK

2 3

Publication Order Number:

MAX

Source

Gate

(Straight Lead

CASE 369D

NTD4960N/D

Drain

DPAK)

Drain

IPAK

55 A

MAX

Source

Related parts for NTD4960N-35G

NTD4960N-35G Summary of contents

Page 1

... CASE 369AC CASE 369D 3 IPAK IPAK (Straight Lead) (Straight Lead DPAK) MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain Gate Drain Source Source Gate Drain Source Y = Year WW = Work Week 4960N = Device Code G = Pb−Free Package ORDERING INFORMATION Publication Order Number: NTD4960N/D ...

Page 2

THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case (Drain) Junction−to−TAB (Drain) Junction−to−Ambient – Steady State (Note 1) Junction−to−Ambient – Steady State (Note 2) 1. Surface−mounted on FR4 board using 1 sq−in pad Cu. 2. Surface−mounted on FR4 board using the ...

Page 3

... Switching characteristics are independent of operating junction temperatures. 5. Assume terminal length of 110 mils. ORDERING INFORMATION Device NTD4960NT4G NTD4960N−1G NTD4960N−35G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise specified) J ...

Page 4

V 10V 25° DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0.040 0.036 0.032 0.028 0.024 0.020 0.016 0.012 0.008 0.004 0 2 ...

Page 5

C iss 1500 1000 C oss 500 C rss DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation 1000 11 100 t ...

Page 6

... DETAIL 0.005 (0.13 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE GAUGE L2 SEATING C PLANE PLANE DETAIL A ROTATED SOLDERING FOOTPRINT* 6.20 3 ...

Page 7

... S 0.025 0.040 0.63 1.01 V 0.035 0.050 0.89 1.27 Z 0.155 −−− 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD4960N/D ...

Related keywords

NTD4960N-35G datasheet
NTD4960N-35G data sheet
NTD4960N-35G pdf datasheet
NTD4960N-35G component
NTD4960N-35G part
NTD4960N-35G distributor
NTD4960N-35G RoHS
NTD4960N-35G datasheet download