NTD4960N-35G ON Semiconductor, NTD4960N-35G Datasheet - Page 6
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NTD4960N-35G
Manufacturer Part Number
NTD4960N-35G
Description
MOSFET N-CH 30V 11.1A IPAK
Manufacturer
ON Semiconductor
Datasheet
1.NTD4960N-35G.pdf
(7 pages)
Specifications of NTD4960N-35G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.9A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 15V
Power - Max
1.07W
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6.1 mOhms
Forward Transconductance Gfs (max / Min)
48 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
11.1 A
Power Dissipation
1.68 W
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
Fall Time
4 ns
Gate Charge Qg
11 nC
Rise Time
20 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTD4960N-35GOS
L3
L4
b2
e
1
b3
4
2
E
3
b
A
D
0.005 (0.13)
B
*For additional information on our Pb−Free strategy and soldering
M
DETAIL A
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
C
c
0.228
5.80
L2
A
GAUGE
PLANE
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
ROTATED 90 CW
SOLDERING FOOTPRINT*
c2
DETAIL A
H
C
http://onsemi.com
0.244
L
6.20
CASE 369AA−01
L1
ISSUE B
5
6
0.102
2.58
A1
H
0.118
3.00
0.063
1.60
C
SCALE 3:1
Z
SEATING
PLANE
0.243
6.17
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
5. DIMENSIONS D AND E ARE DETERMINED AT THE
6. DATUMS A AND B ARE DETERMINED AT DATUM
inches
mm
Y14.5M, 1994.
DIMENSIONS b3, L3 and Z.
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
OUTERMOST EXTREMES OF THE PLASTIC BODY.
PLANE H.
STYLE 2:
DIM
A1
b2
b3
c2
L1
L2
L3
L4
PIN 1. GATE
A
D
E
H
b
c
e
L
Z
2. DRAIN
3. SOURCE
4. DRAIN
0.086
0.000
0.025
0.030
0.180
0.018
0.018
0.235
0.250
0.370
0.055
0.035
0.155
MIN
−−−
0.090 BSC
0.108 REF
0.020 BSC
INCHES
0.094
0.005
0.035
0.045
0.215
0.024
0.024
0.245
0.265
0.410
0.070
0.050
0.040
MAX
−−−
MILLIMETERS
2.18
0.00
0.63
0.76
4.57
0.46
0.46
5.97
6.35
9.40
1.40
0.89
3.93
MIN
−−−
2.29 BSC
0.51 BSC
2.74 REF
10.41
MAX
2.38
0.13
0.89
1.14
5.46
0.61
0.61
6.22
6.73
1.78
1.27
1.01
−−−