NTD4960N-35G ON Semiconductor, NTD4960N-35G Datasheet - Page 2
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NTD4960N-35G
Manufacturer Part Number
NTD4960N-35G
Description
MOSFET N-CH 30V 11.1A IPAK
Manufacturer
ON Semiconductor
Datasheet
1.NTD4960N-35G.pdf
(7 pages)
Specifications of NTD4960N-35G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.9A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
1300pF @ 15V
Power - Max
1.07W
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6.1 mOhms
Forward Transconductance Gfs (max / Min)
48 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
11.1 A
Power Dissipation
1.68 W
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
Fall Time
4 ns
Gate Charge Qg
11 nC
Rise Time
20 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTD4960N-35GOS
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
THERMAL RESISTANCE MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 4)
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
5. Assume terminal length of 110 mils.
Junction−to−Case (Drain)
Junction−to−TAB (Drain)
Junction−to−Ambient – Steady State (Note 1)
Junction−to−Ambient – Steady State (Note 2)
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Parameter
Parameter
(T
J
= 25°C unless otherwise specified)
V
V
V
Symbol
Q
Q
V
GS(TH)
(BR)DSS
R
t
(BR)DSS
Q
t
d(OFF)
C
C
I
I
G(TOT)
d(ON)
GS(TH)
C
G(TOT)
Q
Q
DSS
GSS
DS(on)
g
G(TH)
T
OSS
RSS
t
t
ISS
FS
GS
GD
r
f
J
/T
/
http://onsemi.com
J
V
V
V
GS
GS
GS
V
V
V
V
= 0 V, f = 1.0 MHz, V
V
= 4.5 V, V
= 10 V, V
V
2
DS
GS
V
V
GS
GS
GS
V
I
DS
D
GS
GS
DS
= 24 V
= 4.5 V
= 15 A, R
= 0 V,
= 10 V
Test Condition
= 4.5 V, V
= 0 V, V
= V
= 0 V, I
= 1.5 V, I
DS
DS
DS
, I
= 15 V, I
D
GS
= 15 V, I
D
G
DS
= 250 mA
D
= 250 mA
= 3.0 W
= ±20 V
= 15 A
= 15 V,
T
T
I
I
I
I
J
D
D
DS
J
D
D
D
D
= 125°C
= 25°C
= 15 A
= 15 A
= 30 A
= 30 A
= 30 A
= 30 A
= 15 V
R
Symbol
qJC−TAB
R
R
R
qJC
qJA
qJA
Min
30
1.5
1300
Typ
6.1
342
169
4.0
25
5.0
6.1
10
1.2
4.0
4.7
22
12
20
15
10
48
11
Value
116.5
74.5
3.5
3
±100
Max
12.7
1.0
10
2.5
8.0
mV/°C
mV/°C
°C/W
Unit
Unit
mW
mW
mA
nA
nC
ns
nC
pF
V
V
S