NTD4960N-35G ON Semiconductor, NTD4960N-35G Datasheet - Page 5

• Manufacturer Part Number: NTD4960N-35G
• Description: MOSFET N-CH 30V 11.1A IPAK
• Manufacturer: ON Semiconductor

Specifications of NTD4960N-35G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 mOhm @ 30A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.9A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 15V
• Power - Max: 1.07W
• Mounting Type: Through Hole
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.1 mOhms
• Forward Transconductance Gfs (max / Min): 48 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 11.1 A
• Power Dissipation: 1.68 W
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• Fall Time: 4 ns
• Gate Charge Qg: 11 nC
• Rise Time: 20 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTD4960N-35GOS

1000
1000
100
100
2000
1500
1000
0.1
10
10
500
1
1
0.1
1
0
0
V
I
V
V
SINGLE PULSE
T
D
Figure 11. Maximum Rated Forward Biased
C
DD
GS
GS
C
= 15 A
V
rss
= 25°C
C
C
DS
= 15 V
= 11.5 V
t
t
= 20 V
d(on)
oss
d(off)
Figure 9. Resistive Switching Time
iss
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
t
t
Variation vs. Gate Resistance
Figure 7. Capacitance Variation
r
f
R
5
G
, GATE RESISTANCE (OHMS)
R
THERMAL LIMIT
PACKAGE LIMIT
DS(on)
Safe Operating Area
1
LIMIT
10
10
15
10
TYPICAL PERFORMANCE CURVES
20
V
T
GS
J
10 ms
100 ms
1 ms
10 ms
dc
= 25°C
http://onsemi.com
= 0 V
100
100
25
5
100
30
25
20
15
10
90
80
70
60
50
40
30
20
10
10
5
0
0
0.4
8
6
4
2
0
25
0
Figure 8. Gate−To−Source and Drain−To−Source
Figure 10. Diode Forward Voltage vs. Current
V
Figure 12. Maximum Avalanche Energy vs.
T
Q
GS
J
V
= 25°C
1
SD
= 0 V
0.5
50
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Starting Junction Temperature
T
5
J
Q
, JUNCTION TEMPERATURE (°C)
Q
G
Voltage vs. Total Charge
2
, TOTAL GATE CHARGE (nC)
0.6
75
10
Q
T
100
0.7
15
125
V
0.8
GS
20
150
I
I
T
0.9
D
D
J
= 13 A
= 30 A
= 25°C
175
1.0
25