BGM1013,115 NXP Semiconductors, BGM1013,115 Datasheet - Page 3

• Manufacturer Part Number: BGM1013,115
• Description: MMIC AMPLIFIER SOT-363
• Manufacturer: NXP Semiconductors
• Type: MMIC Wideband Amplifierr

Specifications of BGM1013,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Current - Supply: 27.5mA
• Frequency: 0Hz ~ 2.2GHz
• Gain: 3.62dB
• Noise Figure: 4.6dB ~ 4.7dB
• P1db: 14dBm
• Rf Type: ISM
• Test Frequency: 1GHz
• Voltage - Supply: 5V ~ 6V
• Supply Voltage (max): 6 V
• Supply Current: 35 mA
• Operating Temperature Range: - 40 C to + 85 C
• Mounting Style: SMD/SMT
• Manufacturer's Type: Broadband Amplifier
• Number Of Channels: 1
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (typ): 5V
• Operating Supply Voltage (max): 5.5V
• Package Type: SOT-363
• Mounting: Surface Mount
• Pin Count: 6
• Noise Figure (typ): 4.9@2200MHzdB
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2076-2; 934058247115; BGM1013 T/R

Philips Semiconductors
6. Recommended operating conditions
Table 6:
7. Thermal characteristics
Table 7:
8. Characteristics
Table 8:
V
BGM1013_4
Product data sheet
Symbol
V
T
Symbol
R
Symbol Parameter
V
I
NF
B
K
P
s
s
s
s
S
S
amb
S
S
L(sat)
th(j-sp)
21
11
22
12
= 5 V; I
2
2
2
2
S
DC supply voltage
DC supply current
insertion power gain
input return loss
output return loss
isolation
noise figure
bandwidth
stability factor
saturated load power
Operating conditions
Thermal characteristics
Characteristics
= 27.5 mA; T
Parameter
supply voltage
ambient temperature
Parameter
thermal resistance from junction to solder point
j
= 25 C; measured on demo board; unless otherwise specified.
Conditions
RF input; AC coupled
f = 100 MHz
f = 1 GHz
f = 1.8 GHz
f = 2.2 GHz
f = 2.6 GHz
f = 3 GHz
f = 1 GHz
f = 2.2 GHz
Z
Z
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
3 dB below flat gain at f = 1 GHz
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
L
L
f = 1 GHz
f = 2.2 GHz
f = 1 GHz
f = 2.2 GHz
= 50
= 75
Conditions
Rev. 04 — 1 May 2006
Conditions
P
tot
= 200 mW; T
sp
Min
4.5
40
90 C
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Min
-
23
34.5
34.5
33.0
30.5
25.2
24.0
10.1
9.3
18
13
15
12
40
34
-
-
-
1.2
0.9
13.0
9.0
MMIC wideband amplifier
Typ
5.0
25
BGM1013
Typ
300
Typ
5
27.5
35.2
35.5
34.0
31.8
29.7
26.1
10.6
10.2
20
16
17
15
42
36
4.6
4.9
2.1
1.3
1.0
14.0
10.2
Max
5.5
85
Max
6
33
35.9
36.2
35.2
33.1
31.2
27.9
-
-
-
-
-
-
-
-
4.7
5.1
-
-
-
-
-
Unit
K/W
Unit
V
C
3 of 14
Unit
V
mA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
GHz
dBm
dBm