BGA2012,115 NXP Semiconductors, BGA2012,115 Datasheet - Page 2

• Manufacturer Part Number: BGA2012,115
• Description: MMIC AMPLIFIER 1.9GHZ SOT363
• Manufacturer: NXP Semiconductors
• Type: Silicon MMIC Amplifierr

Specifications of BGA2012,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Current - Supply: 7.5mA
• Frequency: 1.9GHz
• Gain: 16dB
• Noise Figure: 1.7dB
• Rf Type: CDMA, DECT, PHS
• Test Frequency: 1.9GHz
• Voltage - Supply: 3V ~ 4.5V
• Operating Supply Voltage: 4.5 V
• Supply Current: 15 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• P1db: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2065-2; 934056366115; BGA2012 T/R

NXP Semiconductors
FEATURES
 Low current, low voltage
 High linearity
 High power gain
 Low noise
 Integrated temperature compensated biasing
 Control pin for adjustment bias current.
APPLICATIONS
 RF front end
 Low noise amplifiers, e.g. CDMA, PHs, Dect, etc.
DESCRIPTION
Silicon Monolitic Microwave Integrated Circuit (MMIC)
amplifier consisting of an NPN double polysilicon transistor
with integrated biasing for low voltage applications in a
6-pin SOT363 plastic SMD package.
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
2000 Dec 04
V
I
I
|s
NF
V
V
I
I
P
T
T
S
C
S
C
SYMBOL
SYMBOL
stg
j
S
S
C
tot
1900 MHz high linear low noise amplifier
21
|
2
DC supply voltage
DC supply current
DC control current
insertion power gain
noise figure
DC supply voltage
voltage on control pin
supply current
control current
total power dissipation
storage temperature
operating junction temperature
PARAMETER
PARAMETER
RF input AC coupled
V
in application circuit, see Fig.2;
f = 1900 MHz
I
RF input AC coupled
forced by DC voltage on RF input
T
S
s
C
= 7 mA; f = 1900 MHz
 100 C
= V
S
2
PINNING
handbook, halfpage
CONDITIONS
CONDITIONS
Marking code: A6-
PIN
5, 6
Fig.1 Simplified outline (SOT363) and symbol.
1
2
3
4
Top view
6
1
5
2
RF in
V
V
RF out
GND
C
S
4
3
MBL251
V C
DESCRIPTION
3
7.5
0.11
16
1.7





65

TYP.
MIN.
CIRCUIT
RF in
BIAS
Product specification
V S
4.5




4.5
V
15
0.25
70
+150
150
BGA2012
MAX.
MAX.
S
GND
RF out
V
mA
mA
dB
dB
V
V
mA
mA
mW
C
C
UNIT
UNIT