BGA2012,115 NXP Semiconductors, BGA2012,115 Datasheet - Page 4

• Manufacturer Part Number: BGA2012,115
• Description: MMIC AMPLIFIER 1.9GHZ SOT363
• Manufacturer: NXP Semiconductors
• Type: Silicon MMIC Amplifierr

Specifications of BGA2012,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Current - Supply: 7.5mA
• Frequency: 1.9GHz
• Gain: 16dB
• Noise Figure: 1.7dB
• Rf Type: CDMA, DECT, PHS
• Test Frequency: 1.9GHz
• Voltage - Supply: 3V ~ 4.5V
• Operating Supply Voltage: 4.5 V
• Supply Current: 15 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• P1db: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2065-2; 934056366115; BGA2012 T/R

NXP Semiconductors
APPLICATION INFORMATION
List of components (see Fig.2)
Note
1. The stripline (w = 0.7 mm) is on a gold plated double copper-clad printed-circuit board (
2000 Dec 04
handbook, full pagewidth
C1, C2
C3, C5
C4
C6
L1
L2
COMPONENT
1900 MHz high linear low noise amplifier
board thickness = 0.64 mm, copper thickness = 35 m, gold thickness = 5 m.
RF in
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
SMD inductor
SMD inductor
V C
C1
DESCRIPTION
L1
C6
V C
C5
IN
SOT363
CIRCUIT
BIAS
Fig.2 Application circuit.
stripline
V S
APPLICATION
4
GND
TYPICAL
OUT
100 pF
22 nF




C4
L2
C2
C3
APPLICATION
HIGH IP3
V S
MLD470
RF out
100 pF
100 nF
3.9 nH
3.9 nH
22 nF

r
= 6.15),
Product specification
DIMENSIONS
BGA2012
0603
0603
0805
0603
0603
