BGA2776,115 NXP Semiconductors, BGA2776,115 Datasheet
BGA2776,115
Specifications of BGA2776,115
934056630115
BGA2776 T/R
Related parts for BGA2776,115
BGA2776,115 Summary of contents
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... IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. ...
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... NXP Semiconductors MMIC wideband amplifier FEATURES Internally matched Very wide frequency range Very flat gain High gain High output power Unconditionally stable. APPLICATIONS Cable systems LNB IF amplifiers General purpose ISM. DESCRIPTION Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal matching circuit in a 6-pin SOT363 SMD plastic package ...
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... NXP Semiconductors MMIC wideband amplifier LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V DC supply voltage S I supply current S P total power dissipation tot T storage temperature stg T operating junction temperature j P maximum drive power D THERMAL CHARACTERISTICS ...
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... NXP Semiconductors MMIC wideband amplifier APPLICATION INFORMATION Figure 2 shows a typical application circuit for the BGA2776 MMIC. The device is internally matched and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should be not more than 100 pF for applications above 100 MHz ...
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... NXP Semiconductors MMIC wideband amplifier handbook, full pagewidth 180 I = 23.8 mA dBm handbook, full pagewidth 180 I = 23.8 mA dBm Fig.8 Output reflection coefficient ( 135 0.5 0.2 100 MHz 0.2 0 GHz 0.2 0.5 135 Fig.7 Input reflection coefficient ( 135 0.5 3 GHz 100 MHz ...
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... NXP Semiconductors MMIC wideband amplifier 0 handbook, halfpage (dB 1000 I = 23.8 mA dBm Fig.9 Isolation ( function of frequency; 12 typical values. 20 handbook, halfpage P L (dBm GHz Fig.11 Load power as a function of drive power at 1 GHz; typical values. MGU451 handbook, halfpage s 21 (dBm) 2000 3000 f (MHz) ...
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... NXP Semiconductors MMIC wideband amplifier 10 handbook, halfpage NF (dB 1000 I = 23.8 mA Fig.13 Noise figure as a function of frequency; typical values. Scattering parameters I = 23.8 mA dBm MAGNITUDE ANGLE (MHz) (ratio) (deg) 100 0.24807 33.20 200 0.27028 15.23 400 0.28518 5.613 600 0.30074 1.998 800 ...
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... NXP Semiconductors MMIC wideband amplifier PACKAGE OUTLINE Plastic surface mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 scale 2.2 1.35 2.2 1.3 0.65 1.8 1 ...
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... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...
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... NXP Semiconductors Revision history Revision history Document ID Release date BGA2776_N_4 20070829 • Modifications: amended marking code (Fig. 1) BGA2776_3 20020806 (9397 750 10016) BGA2776_2 20011019 (9397 750 08548) BGA2776_N_1 20010330 (9397 750 08193) Data sheet status Change notice Product data sheet - Product specifi ...