BGA2776,115 NXP Semiconductors, BGA2776,115 Datasheet - Page 2

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BGA2776,115

Manufacturer Part Number
BGA2776,115
Description
IC MMIC AMPLIFIER SOT-363
Manufacturer
NXP Semiconductors
Type
General Purpose Amplifierr
Datasheet

Specifications of BGA2776,115

Noise Figure
4.9dB
Package / Case
SC-70-6, SC-88, SOT-363
Current - Supply
24.4mA
Frequency
0Hz ~ 3GHz
Gain
23.2dB
P1db
7.2dBm
Rf Type
ISM
Test Frequency
1GHz
Voltage - Supply
5 V ~ 6 V
Bandwidth
2800 MHz
Mounting Style
SMD/SMT
Number Of Channels
1
Operating Supply Voltage
5 V
Supply Current
34 mA @ 5 V
Maximum Power Dissipation
200 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-3545-2
934056630115
BGA2776 T/R
NXP Semiconductors
FEATURES
APPLICATIONS
DESCRIPTION
Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifier with internal matching circuit in a 6-pin
SOT363 SMD plastic package.
QUICK REFERENCE DATA
V
I
NF
P
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
S
s
Internally matched
Very wide frequency range
Very flat gain
High gain
High output power
Unconditionally stable.
Cable systems
LNB IF amplifiers
General purpose
ISM.
SYMBOL
S
L(sat)
MMIC wideband amplifier
21
2
DC supply voltage
DC supply current
insertion power gain
noise figure
saturated load power
PARAMETER
Rev. 04 – 29 August 2007
f = 1 GHz
f = 1 GHz
f = 1 GHz
CAUTION
PINNING
CONDITIONS
Marking code: G5-.
PIN
2, 5
Fig.1 Simplified outline (SOT363) and symbol.
1
3
4
6
Top view
1
6
V
GND2
RF out
GND1
RF in
S
5
2
4
3
MAM455
DESCRIPTION
5
24.4
23.2
4.9
10.5
TYP.
6
Product specification
4
6
MAX.
BGA2776
1
2, 5
2 of 10
3
V
mA
dB
dB
dBm
UNIT

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