SI1000-C-GM Silicon Laboratories Inc, SI1000-C-GM Datasheet - Page 259
![IC TXRX MCU + EZRADIOPRO](/photos/14/21/142131/42-qfn-series_sml.jpg)
SI1000-C-GM
Manufacturer Part Number
SI1000-C-GM
Description
IC TXRX MCU + EZRADIOPRO
Manufacturer
Silicon Laboratories Inc
Specifications of SI1000-C-GM
Package / Case
42-QFN
Frequency
240MHz ~ 960MHz
Data Rate - Maximum
256kbps
Modulation Or Protocol
FSK, GFSK, OOK
Applications
General Purpose
Power - Output
20dBm
Sensitivity
-121dBm
Voltage - Supply
1.8 V ~ 3.6 V
Current - Receiving
18.5mA
Current - Transmitting
85mA
Data Interface
PCB, Surface Mount
Memory Size
64kB Flash, 4kB RAM
Antenna Connector
PCB, Surface Mount
Number Of Receivers
1
Number Of Transmitters
1
Wireless Frequency
240 MHz to 960 MHz
Interface Type
UART, SMBus, SPI, PCA
Output Power
20 dBm
Operating Supply Voltage
0.9 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Maximum Supply Current
4.1 mA
Minimum Operating Temperature
- 40 C
Modulation
FSK, GFSK, OOK
Protocol Supported
C2, SMBus
Core
8051
Program Memory Type
Flash
Program Memory Size
64 KB
Data Ram Size
4352 B
Supply Current (max)
4.1 mA
Cpu Family
Si100x
Device Core
8051
Device Core Size
8b
Frequency (max)
25MHz
Total Internal Ram Size
4.25KB
# I/os (max)
22
Number Of Timers - General Purpose
4
Operating Supply Voltage (typ)
2.5/3.3V
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
1.8V
On-chip Adc
18-chx10-bit
Instruction Set Architecture
CISC
Mounting
Surface Mount
Pin Count
42
Package Type
QFN EP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Operating Temperature
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
336-1881-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI1000-C-GM
Manufacturer:
FSC
Quantity:
1 000
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23.5.7. Power Amplifier
The Si1000/1 contains an internal integrated power amplifier (PA) capable of transmitting at output levels
between +1 and +20 dBm. The Si1002/3/4/5 contains a PA which is capable of transmitting output levels
between –8 to +13 dBm. The PA design is single-ended and is implemented as a two stage class CE
amplifier with a high efficiency when transmitting at maximum power. The PA efficiency can only be opti-
mized at one power level. Changing the output power by adjusting txpow[2:0] will scale both the output
power and current but the efficiency will not remain constant. The PA output is ramped up and down to pre-
vent unwanted spectral splatter.
In the Si1002/3 the TX and RX may be tied directly. See the TX/RX direct-tie reference design available on
the
Power must be set to 1.
23.5.7.1. Output Power Selection
The output power is configurable in 3 dB steps with the txpow[2:0] field in "Register 6Dh. TX Power". Extra
output power can allow the use of a cheaper smaller antenna, greatly reducing the overall BOM cost. The
higher power setting of the chip achieves maximum possible range, but of course comes at the cost of
higher TX current consumption. However, depending on the duty cycle of the system, the effect on battery
life may be insignificant. Contact Silicon Labs Support for help in evaluating this tradeoff.
6D
Silicon Labs website
R/W
Description
Function/
TX Power
for more details. When the direct tie is used the lna_sw bit in Register 6Dh, TX
reserved reserved reserved reserved lna_sw txpow[2]
D7
txpow[2:0]
txpow[2:0]
000
001
010
011
100
101
110
111
000
001
010
100
101
011
110
111
D6
D5
Rev. 1.0
Si10x0/1 Output Power
Si10x2/3/4/5 Output
D4
+14 dBm
+17 dBm
+20 dBm
+10 dBm
+13 dBm
+11 dBm
+1 dBm
+2 dBm
+5 dBm
+8 dBm
+1 dBm
+4 dBm
+7 dBm
–8 dBm
–5 dBm
–2 dBm
Power
D3
Si1000/1/2/3/4/5
D2
txpow[1] txpow[0]
D1
D0
POR
Def.
18h
259
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