VBO52-08NO7 IXYS, VBO52-08NO7 Datasheet
VBO52-08NO7
Manufacturer Part Number
VBO52-08NO7
Description
DIODE BRIDGE 52A 800V PWS-D
Manufacturer
IXYS
Datasheet
1.VBO52-08NO7.pdf
(2 pages)
Specifications of VBO52-08NO7
Voltage - Peak Reverse (max)
800V
Current - Dc Forward (if)
52A
Diode Type
Single Phase
Speed
Standard Recovery >500ns, > 200mA (Io)
Mounting Type
Chassis Mount
Package / Case
PWS-D
Vrrm, (v)
800
Vvrms, (v)
250
Idavm, (a)
52
@ Tc, (°c)
100
Ifsm, 10 Ms, Tvj = 45°c, (a)
550
Vt0, (v)
0.80
Rt, (mohms)
8.0
Tvjm, (°c)
150
Rthjc, Per Chip, (k/w)
1.45
Rthjh, Per Chip, (k/w)
1.87
Package Style
PWS-D
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Reverse Recovery Time (trr)
-
Single Phase
Rectifier Bridge
Symbol
I
I
I
I
T
T
T
V
M
Weight
Symbol
I
V
V
r
R
R
d
d
a
Data according to IEC 60747 refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
1300
1700
1900
V
dAV
dAV
FSM
2
R
T
t
VJ
stg
S
A
VJM
ISOL
F
T0
900
thJC
thJK
d
V
RSM
1200
1600
1800
V
800
RRM
V
V
V
I
For power-loss calculations only
T
per diode
per module
per diode
per module
Creeping distance on surface
Creepage distance in air
Max. allowable acceleration
F
VJ
R
R
Conditions
T
T
T
V
T
V
T
V
T
V
50/60 Hz, RMS
I
Mounting torque (M5)
Terminal connection torque (M5)
typ.
Conditions
ISOL
= T
C
A
VJ
VJ
VJ
VJ
R
R
R
R
= V
= V
= 150 A; T
= 45°C (R
= 100°C, module
= 0
= 0
= 0
= 0
= 45°C;
= T
= 45°C
= T
< 1 mA
VJM
Type
VBO 52-08NO7
VBO 52-12NO7
VBO 52-16NO7
VBO 52-18NO7
RRM
RRM
VJM
VJM
; T
; T
t = 10 ms (50 Hz), sine
VJ
VJ
VJ
= T
= 25°C
thCA
= 25°C
VJM
= 0.6 K/W), module
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 1 min
t = 1 s
VBO 72-08NO7
VBO 72-12NO7
VBO 72-16NO7
VBO 72-18NO7
<
<
<
Characteristic Values
VBO 52
VBO 52
1520
1520
1250
1250
-40...+150
-40...+125
1.45
0.36
1.87
0.47
550
600
500
550
Maximum Ratings
0.3
1.8
0.8
52
41
5 ±15%
5 ±15%
5
8
2500
3000
150
160
9.4
10
50
2800
2800
2250
2250
VBO 72
VBO 72
0.28 K/W
1.52 K/W
0.38 K/W
750
820
670
740
0.3
1.6
0.8
1.1 K/W
72
49
~
~
+
–
5
5
m/s
mΩ
mm
mm
mA
mA
Nm
Nm
V
V
A
A
A
A
V~
V~
°C
°C
°C
2
2
2
2
A
A
A
A
A
A
2
g
s
s
s
s
I
V
Features
• Package with screw terminals
• Isolation voltage 3000 V~
• Planar passivated chips
• Blocking voltage up to 1800 V
• Low forward voltage drop
• UL registered E 72873
Applications
• Supplies for DC power equipment
• Input rectifiers for PWM inverter
• Battery DC power supplies
• Field supply for DC motors
Advantages
• Easy to mount with two screws
• Space and weight savings
• Improved temperature & power cycling
Dimensions in mm (1 mm = 0.0394")
dAV
RRM
~
= 52/72 A
= 800-1800 V
+
~
VBO 52
VBO 72
-
20100706a
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VBO52-08NO7 Summary of contents
Page 1
... Creepage distance in air A a Max. allowable acceleration Data according to IEC 60747 refer to a single diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved VBO 72-08NO7 VBO 72-12NO7 VBO 72-16NO7 VBO 72-18NO7 ...
Page 2
... Fig. 4 Power dissipation vs. direct output current and ambient temperature 2 K/W 1 0.01 0.1 t[s] Fig. 6 Transient thermal impedance per diode or thyristor, calculated IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved I F(OV) ------ I FSM I (A) FSM TVJ=45°C TVJ=150°C 1 ...