VBO52-08NO7 IXYS, VBO52-08NO7 Datasheet - Page 2

• Manufacturer Part Number: VBO52-08NO7
• Description: DIODE BRIDGE 52A 800V PWS-D
• Manufacturer: IXYS

Specifications of VBO52-08NO7

• Voltage - Peak Reverse (max): 800V
• Current - Dc Forward (if): 52A
• Diode Type: Single Phase
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Chassis Mount
• Package / Case: PWS-D
• Vrrm, (v): 800
• Vvrms, (v): 250
• Idavm, (a): 52
• @ Tc, (°c): 100
• Ifsm, 10 Ms, Tvj = 45°c, (a): 550
• Vt0, (v): 0.80
• Rt, (mohms): 8.0
• Tvjm, (°c): 150
• Rthjc, Per Chip, (k/w): 1.45
• Rthjh, Per Chip, (k/w): 1.87
• Package Style: PWS-D
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -

PVTOT
1.5
0.5
IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
[A]
K/W
200
150
100
Z th
50
I
[W]
200
175
150
125
100
2
1
F
0
75
50
25
Fig. 1 Forward current versus
Fig. 6 Transient thermal impedance per diode or thyristor, calculated
0
T = 150°C
Fig. 4 Power dissipation vs. direct output current and ambient temperature
PSB 82
vj
10
0.5
IFAVM
voltage drop per diode
0.01
V [V]
30
F
1
T = 25°C
vj
1.5
sin.180°
rec.120°
50
rec.60°
rec.30°
0.1
DC
t[s]
70
[A]
2
0
0.47
0.73
1.23
2.72
1
Tamb
0.35 0.22
Fig. 2 Surge overload current per diode
I
------
I FSM
F(OV)
50
1.6
1.4
1.2
0.8
0.6
0.4
10
1
0
I
10
FSM
Z thJK
Z thJC
= RTHCA [K/W]
: Crest value. t: duration
100
10
TVJ=45°C
1
1/2 V RRM
0 V RRM
1 V RRM
[K]
t[ms]
750
I
150
FSM
10
TVJ=150°C
TC
100
105
110
115
120
125
130
135
140
145
°C
150
(A)
2
95
670
10
3
I dAV
10
10
10
[A]
As 2
80
60
40
20
0
4
3
2
1
Fig. 3 I
Fig.5 Maximum forward current
TVJ=45°C
50
per diode or thyristor
at case temperature
2
2
dt versus time (1-10ms)
T (°C)
t [ms]
C
100
4
TVJ=150°C
sin.180°
rec.120°
150
rec.60°
rec.30°
DC
VBO 72
6
200
10
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