STPS200170TV1 STMicroelectronics, STPS200170TV1 Datasheet - Page 2

• Manufacturer Part Number: STPS200170TV1
• Description: DIODE SCHOTTKY 170V 100A ISOTOP
• Manufacturer: STMicroelectronics

Specifications of STPS200170TV1

• Voltage - Forward (vf) (max) @ If: 830mV @ 100A
• Current - Reverse Leakage @ Vr: 200µA @ 170V
• Current - Average Rectified (io) (per Diode): 100A
• Voltage - Dc Reverse (vr) (max): 170V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 170 V
• Forward Continuous Current: 200 A
• Max Surge Current: 700 A
• Configuration: Single
• Forward Voltage Drop: 0.975 V
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: + 150 C
• Mounting Style: Screw
• Insulated Package: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5022-5

1 Characteristics
1
Table 1.
1.
Table 2.
Table 3.
1. Pulse test: t
2. Pulse test: t
2/7
Symbol
Symbol
I
F(RMS)
V
I
P
V
I
I
F(AV)
T
FSM
R
RRM
ARM
T
F
dP
-------------- -
stg
(1)
(2)
dT
j
tot
j
<
Characteristics
When the diodes are used simultaneously:
T
To evaluate the conduction losses use the following equation: P = 0.5 x I
Symbol
------------------------- -
R
R
R
j(diode1)
Reverse leakage current
Forward voltage drop
Repetitive peak reverse voltage
RMS forward current
Average forward current, δ = 0.5
Surge non repetitive forward current t
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature
th j a
Absolute ratings - limiting values per diode at T
Thermal parameters
th(j-c)
Static electrical characteristics
th(c)
p
p
(
1
= 5 ms, δ < 2 %
= 380 µs, δ < 2 %
–
)
= P
thermal runaway condition for a diode on its own heatsink
Parameter
(diode1)
Junction to case
Coupling thermal resistance
X
R
th(j-c)
Parameter
(per diode) + P
Parameter
T
T
T
T
T
T
t
j
j
j
j
j
j
p
p
= 25 °C
= 125 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 10 ms Sinusoidal
= 1 µs, T
(1)
Test conditions
(diode2)
j
= 25 °C
Per diode
V
I
I
F
F
R
Total
X
= 100 A
= 200 A
= V
T
R
amb
c
th(c)
RRM
= 105 °C per diode
= 25 °C, unless otherwise specified
Min.
Value
0.52
0.31
0.1
F(AV)
0.63
0.78
Typ
30
-55 to + 150
STPS200170TV1
100000
+ 0.0018 I
Value
170
200
100
700
150
0.975
Max.
0.83
0.68
0.86
200
100
°C/W
Unit
F
2
Unit
Unit
mA
(RMS)
°C
°C
µA
W
V
A
A
A
V