STPS200170TV1 STMicroelectronics, STPS200170TV1 Datasheet - Page 3

• Manufacturer Part Number: STPS200170TV1
• Description: DIODE SCHOTTKY 170V 100A ISOTOP
• Manufacturer: STMicroelectronics

Specifications of STPS200170TV1

• Voltage - Forward (vf) (max) @ If: 830mV @ 100A
• Current - Reverse Leakage @ Vr: 200µA @ 170V
• Current - Average Rectified (io) (per Diode): 100A
• Voltage - Dc Reverse (vr) (max): 170V
• Diode Type: Schottky
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 2 Independent
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Product: Schottky Rectifiers
• Peak Reverse Voltage: 170 V
• Forward Continuous Current: 200 A
• Max Surge Current: 700 A
• Configuration: Single
• Forward Voltage Drop: 0.975 V
• Maximum Reverse Leakage Current: 200 uA
• Operating Temperature Range: + 150 C
• Mounting Style: Screw
• Insulated Package: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 497-5022-5

STPS200170TV1
Figure 1.
Figure 3.
Figure 5.
800
700
600
500
400
300
200
100
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
1.E-02
1.E-03
1.E-04
100
1.E-03
0
90
80
70
60
50
40
30
20
10
0
0
I
0
M
10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170
d
20
Conduction losses versus average
current (per diode)
Non-repetitive surge peak forward
current vesus overload duration
(maximum values per diode)
Reverse leakage current versus
reverse voltage applied (typical
values per diode)
=0.5
t
1.E-02
δ =0.05
40
T
T
T
T
T
T
j
j
=25°C
j
j
j
I
j
=125°C
=100°C
=50°C
δ =0.1
=75°C
=150°C
F(AV)
t(s)
60
V
(A)
R
(V)
δ =0.2
1.E-01
80
δ
=t /T
100
δ =0.5
p
T
T
T
C
T
C
=125°C
C
=50°C
=75°C
δ =1
t p
1.E+00
120
Figure 2.
Figure 4.
Figure 6.
10000
1000
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
100
120
100
1.E-04
80
60
40
20
0
1
0
δ=0.2
δ=0.1
δ=0.5
δ
=tp/T
Single pulse
1.E-03
Average forward current versus
ambient temperature
(δ = 0.5, per diode)
Relative variation of thermal
impedance (junction to case) versus
pulse duration
Junction capacitances versus
reverse voltage applied (typical
values per diode)
T
25
tp
R
th(j-a)
50
10
1.E-02
=R
th(j-c)
V
t
P
R
T
75
(V)
(s)
amb
1.E-01
(°C)
100
100
1.E+00
δ
1 Characteristics
=tp/T
V
OSC
125
F=1MHz
T
=30mV
T
j
=25°C
tp
RMS
1.E+01
150
1000
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