MWI50-12T7T IXYS, MWI50-12T7T Datasheet - Page 5

• Manufacturer Part Number: MWI50-12T7T
• Description: MOD IGBT SIX-PACK RBSOA E2
• Manufacturer: IXYS

Specifications of MWI50-12T7T

• Igbt Type: Trench
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.15V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Current - Collector Cutoff (max): 4mA
• Input Capacitance (cies) @ Vce: 3.5nF @ 25V
• Power - Max: 270W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 80
• Ic80, Tc = 80°c, Igbt, (a): 50
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.7
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 6.5
• Rthjc, Max, Igbt, (k/w): 0.46
• If25, Tc = 25°c, Diode, (a): 85
• If80, Tc = 80°c, Diode, (a): 57
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
[A]
[A]
[mJ]
I
I
Inverter T1 - T6
C
C
E
100
100
80
60
40
20
80
60
40
20
14
12
10
0
0
8
6
4
2
0
0.0
0
4
Fig. 1 Typ. outpurt characteristics
Fig. 5 Typical switching losses
Fig. 3 Typ. transfer characteristics
V
V
V
R
T
GE
CE
GE
VJ
G
V
0.5
= 18 Ω
= 15 V
= 125°C
5
CE
= 600 V
= ±15 V
20
versus collector current impedance
= 20 V
T
VJ
6
1.0
T
= 125°C
VJ
40
= 125°C
7
1.5
V
V
CE
I
GE
C
8
[A]
[V]
T
60
[V]
2.0
VJ
= 25°C
9
T
VJ
2.5
80
= 25°C
10
3.0
11
100
E on
E
E
rec
off
3.5
12
V
[mJ]
[A]
[V]
I
GE
E
C
100
-10
-15
80
60
40
20
20
15
10
12
10
-5
0
5
0
8
6
4
2
0
10
0
0
Fig. 6 Typical switching losses
Fig. 2 Typ. outpurt characteristics
Fig. 4 Typ. turn-on gate charge
T
V
V
I
T
VJ
C
CE
GE
VJ
E on
E rec
E off
= 125°C
= 125°C
I
V
= 600 V
= ±15 V
= 50 A
100
C
20
CE
V
versus gate resistancae
GE
1
= 600 V
= 13 V
= 50 A
15 V
17 V
19 V
200
30
2
Q
V
MWI 50-12T7T
g
R
CE
300
40
G
[nC]
[V]
[Ω]
3
400
50
4
500
60
20100831d
11 V
9 V
5 - 7
600
70
5