MWI50-12T7T IXYS, MWI50-12T7T Datasheet - Page 7

• Manufacturer Part Number: MWI50-12T7T
• Description: MOD IGBT SIX-PACK RBSOA E2
• Manufacturer: IXYS

Specifications of MWI50-12T7T

• Igbt Type: Trench
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.15V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Current - Collector Cutoff (max): 4mA
• Input Capacitance (cies) @ Vce: 3.5nF @ 25V
• Power - Max: 270W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E2
• Vces, (v): 1200
• Ic25, Tc = 25°c, Igbt, (a): 80
• Ic80, Tc = 80°c, Igbt, (a): 50
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 1.7
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 6.5
• Rthjc, Max, Igbt, (k/w): 0.46
• If25, Tc = 25°c, Diode, (a): 85
• If80, Tc = 80°c, Diode, (a): 57
• Package Style: E2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2010 IXYS All rights reserved
[Ω]
R
100000
10000
1000
100
F
NTC
ig. 13 Typ. NTC resistance vs. temperature
25
50
T
C
75
[°C]
100
125
150
[K/W]
Z
thJC
0.01
0.1
0.001
1
Module
Fig. 14 Typ. transient thermal impedance
0.01
MWI 50-12T7T
t
p
0.1
[s]
1
Diode
IGBT
20100831d
7 - 7
10