MIO1200-33E10 IXYS, MIO1200-33E10 Datasheet - Page 4

• Manufacturer Part Number: MIO1200-33E10
• Description: MOD IGBT SGL SWITCH 3300V E10
• Manufacturer: IXYS

Specifications of MIO1200-33E10

• Igbt Type: NPT
• Configuration: Single Switch
• Voltage - Collector Emitter Breakdown (max): 3300V
• Vce(on) (max) @ Vge, Ic: 3.1V @ 15V, 1200A
• Current - Collector (ic) (max): 1200A
• Current - Collector Cutoff (max): 120mA
• Input Capacitance (cies) @ Vce: 187nF @ 25V
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: E10
• Channel Type: N
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Vces, (v): 3300
• Ic25, Tc = 25°c, Igbt, (a): 1650
• Ic80, Tc = 80°c, Igbt, (a): 1200
• Vce(sat), Typ, Tj = 25°c, Igbt, (v): 3.1
• Eoff, Typ, Tj = 125°c, Igbt, (mj): 1950
• Rthjc, Max, Igbt, (k/w): 0.0085
• If25, Tc = 25°c, Diode, (a): -
• If80, Tc = 80°c, Diode, (a): 1200
• Rthjc, Max, Diode, (k/w): 0.017
• Package Style: E10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power - Max: -
• Lead Free Status / RoHS Status: Compliant, Lead free / RoHS Compliant

Fig. 7 Typical switching energies per pulse
Fig. 9 Typical switching times vs collector current
Fig. 11 Turn-off safe operating area (RBSOA)
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vs collector current
2.5
1.5
0.5
2
1
0
6
5
4
3
2
1
0
0.01
0.1
10
0
0
1
V
V
R
V
T
L
0
CC
vj
σ
CC
G
GE
t
t
t
= 100 nH
= 125 °C
d(off)
r
= 1.5 ohm
d(on)
≤ 2500 V
IC, Chip
IC, Module
500
= 1800 V
= ±15 V
500
500
1000
t
f
1000
1000
1500
V
I
C
CE
I
C
[A]
[V]
[A]
2000
1500
1500
2500
V
R
V
T
L
σ
CC
GE
vj
G
2000
2000
= 100 nH
E
= 125 °C
= 1.5 ohm
= 1800 V
= ±15 V
on
3000
E
off
2500
2500
3500
Fig. 8 Typical switching energies per pulse
Fig. 12 Typical diode forward characteristics,
Fig. 10 Typical switching times vs gate resistor
vs gate resistor
chip level
9
8
7
6
5
4
3
2
1
0
0.1
2400
2000
1600
1200
10
800
400
1
0
0
0
V
I
V
T
L
C
σ
CC
GE
vj
0
V
I
V
T
L
= 1200 A
= 100 nH
C
= 125 °C
σ
CC
GE
vj
= 1800 V
= ±15 V
= 1200 A
= 100 nH
= 125 °C
= 1800 V
= ±15 V
5
5
1
E
on
R
R
G
G
10
MIO 1200-33E10
[ohm]
V
10
[ohm]
F
E
2
[V]
off
25°C
15
15
125°C
3
t
t
t
t
d(off)
d(on)
r
f
20
20
4
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